Datasheet

TMC8462 Datasheet • Document Revision V1.5 • 2019-June-21
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8.2 Operational Ratings
Parameter Symbol Min Max Unit
Junction temperature T
J
-40 125 °C
High voltage supply voltage V
VS,VS0,VS1
4.75 34 V
Digital I/O 3.3V supply voltage V
VCCIO
3.15 3.45 V
I/O supply voltage (high voltage mode) V
VIOx
6.0 34 V
I/O Supply voltage (low voltage mode) V
VIOx
3.0 5.5 V
Continuous output current single high voltage I/O I
OUT,HVIO
100 mA
Continuous current into / from any high voltage I/O supply or GND pin I
IN,HVIO
200 mA
Switching regulator DC output current I
OUT,SW
500 mA
3.3V Switching regulator supply voltage when using internal Schottky
diode
4 5.5 V
Core supply voltage V
VCC_CORE
1.65 1.95 V
Table 212: Operational Ratings for TMC8462-BA
8.3 DC Characteristics and Timing Characteristics
DC characteristics contain the spread of values guaranteed within the specified supply voltage range
unless otherwise specified. Typical values represent the average value of all parts measured at +25 ° C.
Temperature variation also causes stray to some values. A device with typical values will not leave Min/Max
range within the full temperature range.
8.3.1 High Voltage I/O Block
WARNING
When driving inductive loads a freewheeling diode must be provided to the high
voltage I/O pins to prevent from latch-up.
Parameter Symbol Conditions Min Typ Max Unit
HV supply current per high volt-
age I/O pad
I
VHVIO
No current driven,
static mode
90 140 µA
R
DSon
low side R
ONL
T
J
=25 °C 6 10 Ω
R
DSon
high side R
ONH
V
VIOx
=5 V; T
J
=25 °C 10 15 Ω
R
DSon
high side R
ONH
V
VIOx
=3.3 V; T
J
=25 °C 13 20 Ω
Weak pull down current I
PD
37 63 115 µA
Weak pull up current I
PU
V
VIOx
=5 V; T
J
=25 °C 66 110 210 µA
Weak pull up current I
PU
V
VIOx
=3.3 V; T
J
=25 °C 50 76 150 µA
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