Datasheet

TMC5160 DATASHEET (Rev. 1.01 / 2017-NOV-29) 21
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LS
GNDD
GNDA
DIE PAD
LS
BMA2
SRAH
50m,
2512
SRAL
LA1
LA2
HA1
HA2
BMA1
HS
HS
CA1
470n
CA2
470n
+V
M
4.7µF
10R 10R
10R
Coil
out
47R
47R
1n,
100V
1n,
100V
10R
4x AOD4126
Figure 3.8 Example for bridge with tuned components (see scope shots)
Hints
- Tune the bridge layout for minimum loop inductivity. A compact layout is best.
- Keep MOSFET gate connections short and straight and avoid loop inductivity between BM and
corresponding HS driver pin. Loop inductance is minimized with parallel traces, or adjacent traces
on adjacent layers. A wider trace reduces inductivity (don’t use minimum trace width).
- Minimize the length of the sense resistor to low side MOSFET source, and place the TMC5160 near
the sense resistor’s GND connection, with its GND connections directly connected to the same
GND plane.
- Optimize switching behavior by tuning gate current setting and gate resistors. Add MOSFET bridge
output capacitors (470pF to a few nF) to reduce ringing.
- Measure the performance of the bridge by probing BM pins directly at the bridge or at the
TMC5160 using a short GND tip on the scope probe rather than a GND cable, if available.