Datasheet

TMC5160 DATASHEET (Rev. 1.01 / 2017-NOV-29) 18
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MOSFET drivers
Lx
BMx
Hx
0V
V
12VOUT
0V
0V
V
VM
V
VM
+V
12VOUT
V
VM
Load pulling BMx down Load pulling BMx up
t
BBM
t
BBM
Miller plateau
Hx-
BMx
0V
V
CX
-V
BMx
Miller plateau
Effective break-before-make time
-1.2V
Output
slope
Output
slope
t
BBM
Figure 3.4 Slopes, Miller plateau and blank time
The following DRV_CONF parameters allow adapting the driver to the MOSFET bridge:
Parameter
Description
Setting
Comment
BBMTIME
Break-before-make time setting to ensure non-
overlapping switching of high-side and low-side
MOSFETs. BBMTIME allows fine tuning of times in
increments shorter than a clock period.
For higher times, use BBMCLKS.
0…24
time[ns]
100ns*32/(32-BBMTIME)
Ensure ~30% headroom
Reset Default: 0
BBMCLKS
Like BBMTIME, but in multiple of a clock cycle.
The longer setting rules (BBMTIME vs. BBMCLKS).
0…15
0: off
Reset Default: OTP 4 or 2
DRV_
STRENGTH
Selection of gate driver current. Adapts the gate
driver current to the gate charge of the external
MOSFETs.
0…3
Reset Default = 2
FILT_ISENSE
Filter time constant of sense amplifier to suppress
ringing and coupling from second coil operation
Hint: Increase setting if motor chopper noise
occurs due to cross-coupling of both coils.
(Reset Default = %00)
0…3
00: ~100ns (reset default)
01: ~200ns
10: ~300ns
11: ~400ns
DRV_CONF Parameters
Use the lowest gate driver strength setting DRVSTRENGTH giving favorable switching slopes, before
increasing the value of the gate series resistors. A slope time of nominal 40ns to 80ns is absolutely
sufficient and will normally be covered by the shortest possible Break-Before-Make time setting
(BBMTIME=0, BBMCLKS=0).
In case slower slopes have to be used, e.g. with large MOSFETs, ensure that the break-before-make
time (BBMTIME, optionally use BBMCLKS for times >200ns) sufficiently covers the switching event, in
order to avoid bridge cross conduction. The shortest break-before-make time, safely covering the
switching event, gives best results. Add roughly 30% of reserve, to cover production stray of MOSFETs
and driver.