Datasheet

TS8MSS64V6C

144PIN PC133 Unbuffered SO-DIMM

64MB With 8Mx16 CL3

Transcend information Inc

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Value Unit

Voltage on any pin relative to Vss VIN, VOUT -1.0~4.6 V

Voltage on VDD supply relative to Vss VDD, VDDQ -1.0~4.6 V

Storage temperature TSTG -55~+150

°C

Power dissipation PD 4 W

Short circuit current IOS 50 mA

Operating Temperature TA 0~70

°C

Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC OPERATING CONDITIONS AND CHARACTERISTICS

Recommended operating conditions (Voltage referenced to Vss = 0V, TA = 0 to 70 °C)

Parameter Symbol Min Typ Max Unit Note

Supply voltage VDD 3.0 3.3 3.6 V

Input high voltage VIH 2.0 3.0 VDD+0.3 V 1

Input low voltage VIL -0.3 0 0.8 V 2

Output high voltage VOH 2.4 - - V IOH = -2mA

Output low voltage VOL - - 0.4 V IOL = 2mA

Input leakage current ILI -10 - 10 uA 3

Note : 1. VIH (max) = 5.6V AC. The overshoot voltage duration is < 3ns.

2. VIL (min) = -2.0V AC. The undershoot voltage duration is < 3ns.

3. Any input 0V ≤ Vin ≤VDDQ. Input leakage currents include Hi-Z output leakage for all bi-directional buffers

with Tri-state output.

CAPACITANCE (VDD = 3.3V, TA = 23℃, f = 1MHz, VREF = 1.4V ± 200mV)

Parameter Symbol Min Max Unit

Input capacitance (A0~A11, BA0~BA1)

Input capacitance (/RAS, /CAS, /WE)

Input capacitance (CKE)

Input capacitance (CLK)

Input capacitance (/CS)

Input capacitance (DQM0~DQM7)

Data input/output capacitance (DQ0~DQ63)

CIN1

IN2

CIN3

CIN4

CIN5

CIN6

OUT