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TS8MSS64V6C

144PIN PC133 Unbuffered SO-DIMM

64MB With 8Mx16 CL3

Transcend information Inc

Description

The TS8MSS64V6C is a 8M bit x 64 Synchronous Dynamic

RAM high-density memory module. The TS8MSS64V6C

consists of 4 piece of CMOS 8Mx16bits Synchronous DRAMs in

TSOP-II 400mil packages and a 2048 bits serial EEPROM on a

144-pin printed circuit board. The TS8MSS64V6C is a Dual

In-Line Memory Module and is intended for mounting into

144-pin edge connector sockets.

Synchronous design allows precise cycle control with the use of

system clock. I/O transactions are possible on every clock cycle.

Range of operation frequencies, programmable latencies allow

the same device to be useful for a variety of high bandwidth, high

performance memory system applications.

Placement

PCB: 09-1002

Features

• RoHS compliant

• Performance Range: PC133.

• Burst Mode Operation.

• Auto and Self Refresh.

• Serial Presence Detect (SPD) with serial

EEPROM

• LVTTL compatible inputs and outputs.

• Single 3.3V

+ 0.3V power supply.

• MRS cycle with address key programs.

Latency (Access from column address)

Burst Length (1,2,4,8 & Full Page)

Data Scramble (Sequential & Interleave)

• All inputs are sampled at the positive going edge

of the system clock.

Dimensions

Side Millimeters Inches

A 67.60 ± 0.200 2.661 ± 0.008

B 32.80 1.291

C 23.20 0.913

D 4.60 0.181

E 3.30 0.130

F 2.50 0.098

G 2.00 0.079

H 6.00 0.236

I 20.00 0.787

J 24.00 ± 0.200 0.945 ± 0.008

K 1.00 ± 0.100 0.039 ± 0.004

Summary of content (9 pages)

PAGE 1
44PIN PC133 Unbuffered SO-DIMM 64MB With 8Mx16 CL3 TS8MSS64V6C Description Features The TS8MSS64V6C is a 8M bit x 64 Synchronous Dynamic • RoHS compliant RAM high-density memory module. The TS8MSS64V6C • Performance Range: PC133. consists of 4 piece of CMOS 8Mx16bits Synchronous DRAMs in • Burst Mode Operation. TSOP-II 400mil packages and a 2048 bits serial EEPROM on a • Auto and Self Refresh. 144-pin printed circuit board.
PAGE 2
144PIN PC133 Unbuffered SO-DIMM 64MB With 8Mx16 CL3 TS8MSS64V6C Block Diagram Pin Identification Symbol A0~11,BA0~1 DQ0~15 /RAS /CAS 8Mx16 /WE SDRAM SDA SDA SCL A0 A1 A2 24C02 A0~11,BA0~1 DQ16~31 /RAS /CAS 8Mx16 /WE SDRAM LDQM UDQM LDQM UDQM LDQM UDQM /CS /CS CKE CKE CLK CLK DQM0 DQM2 DQM1 DQM3 A0~11,BA0~1 A0~11,BA0~1 DQ32~47 DQ48~63 /RAS /RAS /CAS 8Mx16 /CAS 8Mx16 /WE SDRAM /WE SDRAM /CS /CS CKE CKE CLK CLK DQM6 SCL DQM4 DQM5 DQM7 LDQM UDQM A0~A11 BA0~BA1 DQ0~DQ63 /RAS /CAS /WE /CS /CKE /CLK Funct
PAGE 3
144PIN PC133 Unbuffered SO-DIMM 64MB With 8Mx16 CL3 TS8MSS64V6C ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on any pin relative to Vss VIN, VOUT -1.0~4.6 V Voltage on VDD supply relative to Vss VDD, VDDQ -1.0~4.6 V °C Storage temperature TSTG -55~+150 Power dissipation PD 4 W Short circuit current IOS 50 mA °C Operating Temperature TA 0~70 Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
PAGE 4
144PIN PC133 Unbuffered SO-DIMM 64MB With 8Mx16 CL3 TS8MSS64V6C DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Parameter Symbol Test Condition Burst Length =1 Operating Current tRC≥tRC(min) ICC1 (One Bank Active) IOL=0mA Precharge Standby Current in power-down mode Precharge Standby Current in non power-down mode Active Standby Current in power-down mode Active Standby Current in non power-down mode (One Bank Active) ICC2P Value 8 ICC2PS CKE & CLK≤VIL(m
PAGE 5
144PIN PC133 Unbuffered SO-DIMM 64MB With 8Mx16 CL3 TS8MSS64V6C AC OPERATING TEST CONDITIONS (VDD = 3.3V±0.3V, TA = 0 to 70°C) Parameter AC Input levels (VIH/VIL) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Value Unit 2.4/0.4 V 1.4 V tr/tf=1/1 ns 1.4 V See Fig. 2 Vtt=1.4V 3.3V 50 Ohm 1200 Ohm Output VOH (DC)=2.4V, IOH=-2mA VOL (DC)=0.4V, I OL=2mA Output 870 Ohm Z0=50 Ohm 50pF 50pF (Fig.
PAGE 6
144PIN PC133 Unbuffered SO-DIMM 64MB With 8Mx16 CL3 TS8MSS64V6C AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Refer to the individual component, not the whole module. Parameter Symbol Value Min Max CLK cycle time tCC CLK to valid output delay tSAC Output data hold time 7.5 tOH CLK high pulse width CLK low pulse width Input setup time Input hold time CLK to output in Low-Z tCH tCL tSS tSH tSLZ CLK to output in Hi-Z tSHZ Unit Note 1000 ns 1 5.
PAGE 7
144PIN PC133 Unbuffered SO-DIMM 64MB With 8Mx16 CL3 TS8MSS64V6C SIMPLIFIED TRUTH TABLE COMMAND Register Mode Register Set Auto Refresh Refresh Self Refresh CKEn /CS /RAS /CAS /WE DQM H X L L L L X OP CODE L L L H X X X X H Entry Exit Bank Active & Row Addr.
PAGE 8
144PIN PC133 Unbuffered SO-DIMM 64MB With 8Mx16 CL3 TS8MSS64V6C Serial Presence Detect Specification Serial Presence Detect Byte No. Function Described Standard Specification Vendor Part 0 # of Bytes Written into Serial Memory 128bytes 80 1 Total # of Bytes of S.P.
PAGE 9
144PIN PC133 Unbuffered SO-DIMM 64MB With 8Mx16 CL3 TS8MSS64V6C 36-61 Superset Information - 00 62 SPD Data Revision Code - 02 63 Checksum for Bytes 0-62 - 96 Transcend 7F, 4F T 54 64-71 72 Manufacturers JEDEC ID Code per JEP-108E Manufacturing Location 54 53 38 4D 53 53 73-90 Manufacturers Part Number TS8MSS64V6C 36 34 56 36 43 20 20 20 20 20 20 20 91-92 Revision Code - 0 93-94 Manufacturing Date By Manufacturer Variable 95-98 Assembly Serial Number By Manufacturer Variabl