Datasheet

T
T
T
S
S
S
6
6
6
4
4
4
M
M
M
S
S
S
S
S
S
6
6
6
4
4
4
V
V
V
6
6
6
L
L
L
144PIN PC133 Unbuffered SO-DIMM
512MB With 32M X 8 CL3
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Value Unit
Voltage on any pin relative to Vss V
IN
, V
OUT
-1.0 to +4.6 V
Voltage on V
DD
supply to Vss V
DD
, V
DDQ
-1.0 to +4.6 V
Storage temperature T
STG
-55 to +125 °C
Power dissipation P
D
12.7 W
Short circuit current Ios 50 mA
Operating Temperature T
A
0 ~ 70 °C
Note:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device
reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (TA = 0 to 70
°
C)
Parameter Symbol Min Typ Max Unit Note
Input high voltage V
IH
2.0 3.0 V
DD
+0.3 V 1
Input low voltage V
IL
-0.5 0 0.8 V 2
Output high voltage V
OH
2.4 - - V IOH=-2mA
Output low voltage V
OL
- - 0.4 V IOL=2mA
Input leakage current I
IL
-10 - 10 uA 3
output leakage current I
oL
-10 - 10 uA -
Note:
1. V
IH
(max) = 2.0V AC .The overshoot voltage duration is 3ns.
2. V
IL
(min) = -2.0V AC .The undershoot voltage duration is 3ns.
3. Any input 0V V
IN
V
DDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. Dout is disabled, 0V V
OUT
V
DDQ.
CAPACITANCE (VDD = 3.3V
± .0.3V, TA = 0°C~70°C)
Parameter Symbol Min Max Unit
Input capacitance (A
0
~A
12
, BA
0
~ BA
1
)
Input capacitance (/RAS, /CAS, /WE)
Input capacitance (CKE0,CKE1)
Input capacitance (CLK0~CLK3)
Input capacitance (/CS0, /CS2)
Input capacitance (DQM0~DQM7)
Data input/output capacitance (DQ0~DQ63)
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
IN6
C
OUT1
-
-
-
-
-
-
-
40
40
20
28
25
10
18
pF
pF
pF
pF
pF
pF
pF
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Transcend information Inc.
5