Datasheet

T
T
T
S
S
S
6
6
6
4
4
4
M
M
M
S
S
S
Q
Q
Q
6
6
6
4
4
4
V
V
V
4
4
4
J
J
J
200PIN DDR2 400 SO-DIMM
512MB With 64Mx8 CL3
Transcend Information Inc.
11
37
Internal write to read command delay(=tWTR)
2.8ns 28
38
Internal read to precharge command delay(=tRTP)
7.5ns 1E
39
Memory analysis probe characteristics
- 00
40
Reserved
- 00
41
DDR SDRAM Minimum Active to Active/Auto Refresh
Time(tRC)
55ns 37
42
DDR SDRAM Minimum Auto-Refresh to
Active/Auto-Refresh Command Period (tRFC)
105ns 69
43
DDR SDRAM Maximum Device Cycle Time (tCK max)
8ns 80
44
DDR SDRAM DQS-DQ Skew for DQS and associated
DQ signals (tDQSQ max)
0.3ns 23
45
DDR SDRAM Read Data Hold Skew Factor (tQHS)
0.4ns 2D
46
PLL Relock Time
- 00
47~61
Superset Information
- 00
62 SPD Data Revision Code REV 1.0 10
63 Checksum for Bytes 0-62 28 AC
64-71 Manufacturers JEDEC ID Transcend 7F, 4F
72 Manufacturing Location T 54
54 53 36 34 4D 53
51 36 34 56 34 4A
73-90 Manufacturers Part Number TS64MSQ64V4J
20 20 20 20 20 20
91-92 Revision Code - -
93-94 Manufacturing Date By Manufacturer Variable
95-98 Assembly Serial Number By Manufacturer Variable
99-127 Manufacturer Specific Data - -
128~255
Open for customer use
Undefined -