Datasheet

T
T
T
S
S
S
6
6
6
4
4
4
M
M
M
S
S
S
Q
Q
Q
6
6
6
4
4
4
V
V
V
4
4
4
J
J
J
200PIN DDR2 400 SO-DIMM
512MB With 64Mx8 CL3
Transcend Information Inc.
10
SERIAL PRESENCE DETECT SPECIFICATION
Serial Presence Detect
Byte No. Function Described Standard Specification Vendor Part
0
# of Serial PD Bytes written during module production
128bytes 80
1 Total # of Bytes of S.P.D Memory Device 256bytes 08
2 Fundamental Memory Type DDR2 SDRAM 08
3 # of Row Addresses on this Assembly 14 0E
4 # of Column Addresses on this Assembly 10 0A
5 # of Module Rows on this Assembly
1 ROW, Planar,
30.0mm
60
6 Data Width of this Assembly 64bits 40
7
Reserved
- 00
8 VDDQ and Interface Standard of this Assembly SSTL 1.8V 05
9
DDR2 SDRAM cycle time at Max. Supported CAS
latency=X
5ns 50
10
DDR2 SDRAM Access time from clock at CL=X
±0.6ns
60
11 DIMM configuration type (non-parity, Parity, ECC) Non ECC 00
12 Refresh Rate 7.8us 02
13 Primary DDR2 SDRAM Width X8 08
14 Error Checking DDR2 SDRAM Width N/A 00
15 Reserved - 00
16
DDR2 SDRAM device attributes: Burst lengths
supported
4,8 0C
17
DDR2 SDRAM device attributes: # of banks on each
DDR2 SDRAM device
4 banks 04
18
DDR2 SDRAM device attributes:CAS Latency
supported
5,4,3 38
19 Reserved - 00
20
DIMM type information
SODIMM 04
21 DDR2 SDRAM Module Attributes
Analysis probe not
installed, FET switch
external not enable
00
22 DDR2 SDRAM Device Attributes: General Supports weak driver 01
23 DDR2 SDRAM Cycle Time CL=X-1 5ns 50
24 DDR SDRAM Access from Clock CL=X-1
±0.6ns
60
25 DDR SDRAM Cycle Time CL=X-2 5.0ns 50
26 DDR SDRAM Access from Clock CL=X-2
±0.6ns
60
27 Minimum Row Precharge Time (tRP) 15ns 3C
28 Minimum Row Active to Row Activate delay (tRRD) 7.5ns 1E
29 Minimum RAS to CAS Delay (tRCD) 15ns 3C
30 Minimum active to Precharge time (tRAS) 40ns 28
31 Module ROW density 512MB 80
32
Command and address setup time before clock(=tIS)
0.35ns 35
33
Command and address hold time after clock(=tIH)
0.47ns 47
34
Data input setup time before strobe(=tDS)
0.15ns 15
35
Data input hold time after strobe(=tDH)
0.27ns 27
36
Write recovery time(=tWR)
15ns 3C