Datasheet

T
T
T
S
S
S
6
6
6
4
4
4
M
M
M
L
L
L
S
S
S
6
6
6
4
4
4
V
V
V
6
6
6
F
F
F
168PIN PC133 Unbuffered DIMM
512MB With 32Mx8 CL3
Transcend information Inc. 6
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ±200 mV)
Parameter Symbol Min Max Unit
Input capacitance (A0~A12, BA0~ BA1)
Input capacitance (/RAS, /CAS, /WE)
Input capacitance (CKE0, CKE1)
Input capacitance (/CLK0~ /CLK3)
Input capacitance (/CS0~ /CS3)
Input capacitance (DQM0~DQM7)
Data input/output capacitance (DQ0~DQ63)
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
IN6
C
OUT1
80
80
50
40
25
15
10
100
100
60
45
35
20
15
pF
pF
pF
pF
pF
pF
pF
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to70°C)
Parameter Symbol Test Condition CAS Latency Value (Typ) Unit Note
Operating Current
(One Bank Active)
I
CC1
Burst Length =1
t
RC≥tRC(min)
I
OL=0mA
960 mA 1
ICC2P CKE≤VIL(max), tCC=10ns 32
Precharge Standby Current
in power-down mode
I
CC2PS CKE & CLK≤VIL(max), tCC=∞ 32
mA
ICC2N CKE≥VIH(min), /CS≥VIH(min), tCC=10ns
Input signals are changed one time during 20ns
320
Precharge Standby Current
in non power-down mode
I
CC2NS CKE≥VIH(min), CLK≤VIL(max), tCC=∞
Input signals are stable
160
mA
ICC3P CKE≤VIL(max), tCC=10ns 96
Active Standby Current
in power-down mode
I
CC3PS CKE & CLK≤VIL(max), tCC=∞ 96
mA
ICC3N
CKE≥VIH(min), /CS≥VIH(min), tCC=10ns
Input signals are changed one time during 20ns
480
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3NS
CKE≥VIH(min), CLK≤VIL(max), tCC=∞
Input signals are stable
400
mA
Operating Current
(Bust Mode)
ICC4
I
OL= 0 mA
Page Burst
tccD = 2CLKs
1,120 mA
1
Refresh Current ICC5 tRC≥tRC(min) 1,840 mA 2
C 48 Self Refresh Current ICC6
CKE≤0.2V
L 24
mA
Note:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL=VDDQ/VSSQ)