Datasheet

TS32MSS64V8L2

144PIN PC100 Unbuffered SO-DIMM

256MB With 16M X 8 CL2

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Value Unit

Voltage on any pin relative to Vss VIN, VOUT -1.0~4.6 V

Voltage on VDD supply relative to Vss VDD, VDDQ -1.0~4.6 V

Storage temperature TSTG -55~+150 °C

Power dissipation PD 16 W

Short circuit current

IOS

Mean time between failure MTBF 50 year

Temperature Humidity Burning THB 85°C/85%, Static Stress °C-%

Temperature Cycling Test TC 0°C ~ 125°C Cycling °C

Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC OPERATING CONDITIONS AND CHARACTERISTICS

Recommended operating conditions (Voltage referenced to Vss = 0V, TA = 0 to 70 °C)

Parameter Symbol Min Typ Max Unit Note

Supply voltage VDD 3.0 3.3 3.6 V

Input high voltage VIH 2.0 3.0 VDD+0.3 V 1

Input low voltage VIL -0.3 0 0.8 V 2

Output high voltage VOH 2.4 - - V IOH = -2mA

Output low voltage VOL - - 0.4 V IOL = 2mA

Input leakage current ILI -10 - 10 uA 3

Note : 1. VIH (max) = 5.6V AC. The overshoot voltage duration is < 3ns.

2. VIL (min) = -2.0V AC. The undershoot voltage duration is < 3ns.

3. Any input 0V ≤ Vin ≤ VDDQ

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-state output.

CAPACITANCE (VDD = 3.3V, TA = 23℃, f = 1MHz, VREF = 1.4V ± 200mV)

Parameter Symbol Min Max Unit

Input capacitance (A0~A11, BA0~BA1)

Input capacitance (/RAS, /CAS, /WE)

Input capacitance (CKE0,CKE1)

Input capacitance (CLK0~CLK1)

Input capacitance (/CS0,/CS1)

Input capacitance (DQM0~DQM7)

Data input/output capacitance (DQ0~DQ63)

IN1

CIN2

CIN3

CIN4

CIN5

CIN6

OUT

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