Datasheet

ManualsBrandsTranscend Manualscomputer componentsTS32MSS64V8L2

TS32MSS64V8L2

144PIN PC100 Unbuffered SO-DIMM

256MB With 16M X 8 CL2

Description

The TS32MSS64V8L2 is a 32M bit x 64 Synchronous

Dynamic RAM high-density memory module. The

TS32MSS64V8L2 consists of 16 pcs of CMOS 16Mx8bits

Synchronous DRAMs in 54pins sTSOP packages and a

2048 bits serial EEPROM on a 144-pin printed circuit

board. The TS32MSS64V8L2 is a Dual In-Line Memory

Module and is intended for mounting into 144-pin edge

connector sockets.

Synchronous design allows precise cycle control with the

use of system clock. I/O transactions are possible on every

clock cycle. Range of operation frequencies,

programmable latencies allow the same device to be useful

for a variety of high bandwidth, high performance memory

system applications.

Features

• Performance Range: PC100 CL2

• Burst Mode Operation.

• Auto and Self Refresh.

• Serial Presence Detect (SPD) with serial

EEPROM

• LVTTL compatible inputs and outputs.

• Single 3.3V ± 0.3V power supply.

• MRS cycle with address key programs.

Latency (Access from column address)

Burst Length (1,2,4,8 & Full Page)

Data Sequence (Sequential & Interleave)

• All inputs are sampled at the positive going edge

of the system clock.

Placement

PCB : 09-1100

Transcend information Inc

Summary of content (11 pages)

PAGE 1
44PIN PC100 Unbuffered SO-DIMM 256MB With 16M X 8 CL2 TS32MSS64V8L2 Placement Description The TS32MSS64V8L2 is a 32M bit x 64 Synchronous Dynamic RAM high-density memory module. The TS32MSS64V8L2 consists of 16 pcs of CMOS 16Mx8bits Synchronous DRAMs in 54pins sTSOP packages and a B 2048 bits serial EEPROM on a 144-pin printed circuit D board. The TS32MSS64V8L2 is a Dual In-Line Memory A Module and is intended for mounting into 144-pin edge connector sockets.
PAGE 2
144PIN PC100 Unbuffered SO-DIMM 256MB With 16M X 8 CL2 TS32MSS64V8L2 Pin Identification Dimensions Side Millimeters Inches Symbol Function A 67.60 ± 0.200 2.661 ± 0.008 A0~A11 Address inputs B 32.80 1.291 BA0, BA1 Select Bank C 23.20 0.913 DQ0~DQ63 Data inputs/outputs D 4.60 0.181 E 3.30 0.130 CLK0, CLK1 Clock Input F 2.50 0.098 CKE0, CKE1 Clock Enable Input G 4.00 0.157 /CS0, /CS1 Chip Select Input H 6.00 0.236 /RAS Row address strobe I 20.00 0.
PAGE 3
144PIN PC100 Unbuffered SO-DIMM 256MB With 16M X 8 CL2 TS32MSS64V8L2 Pinouts Pin Pin Pin Pin No Name No Name 01 Vss 49 DQ13 03 DQ0 51 DQ14 05 DQ1 53 DQ15 07 DQ2 55 Vss 09 DQ3 57 *CB0 11 Vcc 59 *CB1 13 DQ4 61 CLK0 15 DQ5 63 Vcc 17 DQ6 65 /RAS 19 DQ7 67 /WE 21 Vss 69 /CS0 23 DQM0 71 */CS1 25 DQM1 73 NC 27 Vcc 75 Vss 29 A0 77 *CB2 31 A1 79 *CB3 33 A2 81 Vcc 35 Vss 83 DQ16 37 DQ8 85 DQ17 39 DQ9 87 DQ18 41 DQ10 89 DQ19 43 DQ11 91 Vss 45 Vcc 93 DQ20 47 DQ12 95 DQ21 * Please refer Block Diagram Transcend informa
PAGE 4
144PIN PC100 Unbuffered SO-DIMM 256MB With 16M X 8 CL2 TS32MSS64V8L2 Block Diagram CLK DQM4 CLK DQM5 A0~A11,BA0~1 A0~A11,BA0~1 DQ0~7 DQ0~7 /RAS /RAS /RAS /RAS /CAS /WE 16Mx8 SDRAM A0~A11,BA0~1 /CAS 16Mx8 /WE SDRAM /CAS 16Mx8 /WE SDRAM /CS /CS /CS CKE CKE CKE CKE DQM /CS CLK DQM2 CLK DQM3 CLK DQM6 CLK DQM7 A0~A11,BA0~1 A0~A11,BA0~1 DQ0~7 DQ0~7 DQ0~7 DQ0~7 /RAS /RAS /RAS /WE /CS /CAS /WE 16Mx8 SDRAM DQM CKE CKE CLK DQM1 DQM0 A0~A11,BA0~1 /WE CKE CLK DQM4
PAGE 5
144PIN PC100 Unbuffered SO-DIMM 256MB With 16M X 8 CL2 TS32MSS64V8L2 ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on VDD supply relative to Vss Storage temperature Power dissipation Short circuit current Mean time between failure Temperature Humidity Burning Temperature Cycling Test Symbol VIN, VOUT VDD, VDDQ TSTG PD Value -1.0~4.6 -1.0~4.
PAGE 6
144PIN PC100 Unbuffered SO-DIMM 256MB With 16M X 8 CL2 TS32MSS64V8L2 DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Parameter Symbol Test Condition Operating Current Burst Length =1 ICC1 (One Bank Active) tRC≥tRC(min) IOL=0mA ICC2P CKE≤VIL(max), tCC=15ns Precharge Standby Current ICC2PS CKE & CLK≤VIL(max), tCC=∞ in power-down mode ICC2N CKE≥VIH(min), /CS≥VIH(min), tCC=15ns Value Unit Note 1,120 mA 1 16 240 mA Input signals are changed one time during
PAGE 7
144PIN PC100 Unbuffered SO-DIMM 256MB With 16M X 8 CL2 TS32MSS64V8L2 AC OPERATING TEST CONDITIONS (VDD = 3.3V±0.3V, TA = 0 to 70°C) Parameter AC Input levels (VIH/VIL) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Value 2.4/0.4 1.4 tr/tf=1/1 1.4 See Fig. 2 Unit V V ns V Vtt=1.4V 3.3V 50 Ohm 1200 Ohm Output VOH (DC)=2.4V, IOH=-2mA VOL (DC)=0.4V, I OL=2mA Output Z0=50 Ohm 50pF 50pF 870 Ohm (Fig.
PAGE 8
144PIN PC100 Unbuffered SO-DIMM 256MB With 16M X 8 CL2 TS32MSS64V8L2 AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Refer to the individual component, not the whole module.
PAGE 9
144PIN PC100 Unbuffered SO-DIMM 256MB With 16M X 8 CL2 TS32MSS64V8L2 SIMPLIFIED TRUTH TABLE COMMAND Register Mode Register Set Refresh Auto Refresh Entry Self Refresh Exit Bank Active & Row Addr.
PAGE 10
144PIN PC100 Unbuffered SO-DIMM 256MB With 16M X 8 CL2 TS32MSS64V8L2 Serial Presence Detect Specification Byte No. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36-61 62 63 64-71 72 Serial Presence Detect Function Described Standard Specification # of Bytes Written into Serial Memory 128bytes Total # of Bytes of S.P.
PAGE 11
144PIN PC100 Unbuffered SO-DIMM 256MB With 16M X 8 CL2 TS32MSS64V8L2 99-125 126 127 128~255 Manufacturer Specific Data Intel Specification Frequency Intel Specification CAS# Latency/Clock Signal Support Unused Storage Locations Transcend information Inc 11 100MHz CL=2&3 Clock=0,1 Open 0 64 C6 FF