Datasheet

T
T
T
S
S
S
3
3
3
2
2
2
M
M
M
S
S
S
S
S
S
6
6
6
4
4
4
V
V
V
8
8
8
D
D
D
2
2
2
144PIN PC100 Unbuffered SO-DIMM
256MB With 16Mx8 CL2
Description
The TS32MSS64V8D2 is a 32M bit x 64 Synchronous
Dynamic RAM high-density memory modules. The
TS32MSS64V8D2 consists of 16 pieces of CMOS
4Mx8bitsx4banks Synchronous DRAMs in TSOP-II 400mil
packages, a 2048 bits serial EEPROM and a PLL on a
144-pin printed circuit board. The TS32MSS64V8D2 is a
Dual In-Line Memory Module and is intended for mounting
into 144-pin edge connector sockets.
Synchronous design allows precise cycle control with the
use of system clock. I/O transactions are possible on every
clock cycle. Range of operation frequencies, programmable
latencies allow the same device to be useful for a variety of
high bandwidth, high performance memory system
applications.
Features
Burst Mode Operation.
Auto and Self Refresh.
Serial Presence Detect (SPD) with serial EEPROM
LVTTL compatible inputs and outputs.
Single 3.3V ± 0.3V power supply.
MRS cycle with address key programs.
Latency (Access from column address)
Burst Length (1,2,4,8 & Full Page)
Data Scramble (Sequential & Interleave)
All inputs are sampled at the positive going edge of the
system clock.
Pin Identification
Symbol Function
A0~A11 Address inputs
BA0, BA1 Banks Select
D0~D63 Data inputs/outputs
CLK0 Clock Input
CKE0, CKE1 Clock Enable Input
/CS0, /CS1 Chip Select Input
/RAS Row address strobe
/CAS Column address strobe
/WE Write Enable
DQM0~DQM7 DQM
Vcc Power Supply
Vss Ground
SDA Serial Address / Data I/O
SCL Serial Clock
NC No Connection
Dimensions
Side Millimeters Inches
A 67.60 ± 0.20 2.661 ± 0.008
B 32.80 1.291
C 23.20 0.913
D 4.60 0.181
E 3.30 0.130
F 4.00 0.157
G 20.00 0.787
H 50.50 ± 0.20 1.988 ± 0.008
I 1.00 ± 0.10 0.040 ± 0.004
Transcend information Inc.
1

Summary of content (10 pages)