Datasheet

ManualsBrandsTranscend Manualscomputer componentsTS32MSS64V6G

144PIN PC133 Unbuffered SO-DIMM

256MB With 16MX16 CL3

Transcend information Inc

Description

The TS32MSS64V6G is a 32Mx64 Synchronous

Dynamic RAM high-density memory module. The

TS32MSS64V6G consists of 8 pieces of CMOS

16Mx16bits Synchronous DRAMs in TSOP-II 400mil

packages and a 2048 bits serial EEPROM on a 144-pin

printed circuit board. The TS32MSS64V6G is a Dual

In-Line Memory Module and is intended for mounting into

144-pin edge connector sockets.

Synchronous design allows precise cycle control with the

use of system clock. I/O transactions are possible on every

clock cycle. Range of operation frequencies,

programmable latencies allow the same device to be useful

for a variety of high bandwidth, high performance memory

system applications.

Features

• Burst Mode Operation.

• Auto and Self Refresh.

• Serial Presence Detect (SPD) with serial EEPROM

• LVTTL compatible inputs and outputs.

• Single 3.3V ± 0.3V power supply.

• MRS cycle with address key programs.

Latency (Access from column address)

Burst Length (1,2,4,8 & Full Page)

Data Sequence (Sequential & Interleave)

• All inputs are sampled at the positive going edge

of the system clock.

• DRAM Brand: Promos.

• Operating Temperature T

A: 0~70 °C

Pin Identification

Symbol Function

A0~A12 Address inputs

BA0,BA1 Select Bank

DQ0~DQ63 Data inputs/outputs

CLK0,CLK1 Clock Input

CKE0,CKE1 Clock Enable Input

/CS0,/CS1 Chip Select Input

/RAS Row address strobe

/CAS Column address strobe

/WE Write Enable

DQM0~7 DQM

Vcc Power Supply

Vss Ground

SDA Serial Address / Data I/O

SCL Serial Clock

NC No Connection

Summary of content (11 pages)

PAGE 1
44PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G Pin Identification Description The TS32MSS64V6G Dynamic RAM TS32MSS64V6G is a high-density consists 32Mx64 memory of 8 Synchronous module. pieces of Symbol The CMOS Function A0~A12 Address inputs BA0,BA1 Select Bank printed circuit board.
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144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G Dimension B D A F C E G H K I J PCB : 09-6757 Transcend information Inc Side Millimeters Inches A 67.60 ± 0.200 2.661 ± 0.008 B 32.80 1.291 C 23.20 0.913 D 4.60 0.181 E 3.30 0.130 F 2.50 0.098 G 4.00 0.157 H 6.00 0.236 I 20.00 0.787 J 29.21 ± 0.200 1.150 ± 0.008 K 1.00 ± 0.100 0.039 ± 0.
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144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G Pinouts Pin Pin Pin Pin No Name No Name 01 Vss 49 DQ13 03 DQ0 51 DQ14 05 DQ1 53 DQ15 07 DQ2 55 Vss 09 DQ3 57 *CB0 11 Vcc 59 *CB1 13 DQ4 61 CLK0 15 DQ5 63 Vcc 17 DQ6 65 /RAS 19 DQ7 67 /WE 21 Vss 69 /CS0 23 DQM0 71 */CS1 25 DQM1 73 NC 27 Vcc 75 Vss 29 A0 77 *CB2 31 A1 79 *CB3 33 A2 81 Vcc 35 Vss 83 DQ16 37 DQ8 85 DQ17 39 DQ9 87 DQ18 41 DQ10 89 DQ19 43 DQ11 91 Vss 45 Vcc 93 DQ20 47 DQ12 95 DQ21 * Please refer Block Diagram Transcend informati
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144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G Block Diagram /CS1 /CS0 /CS /CS /CS /CS DM0 DM DM DM2 DM DM DQ 0 DQ 1 DQ 2 DQ 3 DQ 4 DQ 5 DQ 6 DQ 7 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 DQ 16 DQ 17 DQ 18 DQ 19 DQ 20 DQ 21 DQ 22 DQ 23 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 U1 U3 U5 U7 DM4 DM DM DM6 DM DM DQ 32 DQ 33 DQ 34 DQ 35 DQ 36 DQ
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144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on VDD supply relative to Vss Storage temperature Power dissipation Short circuit current Operating Temperature Symbol VIN, VOUT VDD, VDDQ TSTG PD IOS TA Value -1.0~4.6 -1.0~4.6 -55~+150 8 50 0 ~ 70 Unit V V °C W mA °C Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
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144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Parameter Operating Current (One Bank Active) Symbol ICC1 Precharge Standby Current ICC2P in power-down mode ICC2PS Precharge Standby Current in non power-down mode Active Standby Current in power-down mode Active Standby Current in non power-down mode (One Bank Active) ICC2N ICC2NS ICC3P ICC3PS ICC3N ICC3NS Test Condition Burst Length =1 tRC
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144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G AC OPERATING TEST CONDITIONS (VDD = 3.3V±0.3V, TA = 0 to 70°C) Parameter AC Input levels (VIH/VIL) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Value 2.4/0.4 1.4 tr/tf=1/1 1.4 See Fig. 2 Unit V V ns V Vtt=1.4V 3.3V 50 Ohm 1200 Ohm Output VOH (DC)=2.4V, IOH=-2mA VOL (DC)=0.4V, I OL=2mA Output Z0=50 Ohm 50pF 50pF 870 Ohm (Fig.
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144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Refer to the individual component, not the whole module. Parameter Symbol Value Min Max Note 1000 ns 1 5.4 ns 1, 2 CLK cycle time tCC CLK to valid output delay tSAC Output data hold time tOH 3.0 ns 2 CLK high pulse width CLK low pulse width Input setup time Input hold time CLK to output in Low-Z tCH tCL tSS tSH tSLZ 2.5 2.5 1.5 0.
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144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G SIMPLIFIED TRUTH TABLE COMMAND Register Refresh Mode Register Set Auto Refresh Entry Self Refresh Exit Bank Active & Row Addr.
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144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G Serial Presence Detect Specification Serial Presence Detect Byte No. Standard Specification Vendor Part 0 # of Bytes Written into Serial Memory Function Described 128bytes 80 1 Total # of Bytes of S.P.
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144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G 62 SPD Data Revision Code VER1.