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TS32MSS64V6F

144PIN PC133 Unbuffered SO-DIMM

256MB With 32M X 8 CL3

Transcend information Inc 1

Description

The TS32MSS64V6F is a 32M bit x 64 Synchronous

Dynamic RAM high-density memory module. The

TS32MSS64V6F consists of 8 piece of CMOS 32Mx8bits

Synchronous DRAMs in TSOP-II 400mil packages and a

2048 bits serial EEPROM on a 144-pin printed circuit

board. The TS32MSS64V6F is a Dual In-Line Memory

Module and is intended for mounting into 144-pin edge

connector sockets.

Synchronous design allows precise cycle control with the

use of system clock. I/O transactions are possible on every

clock cycle. Range of operation frequencies,

programmable latencies allow the same device to be useful

for a variety of high bandwidth, high performance memory

system applications.

Features

• RoHS compliant products.

• Performance Range: PC133.

• Burst Mode Operation.

• Auto and Self Refresh.

• Serial Presence Detect (SPD) with serial

EEPROM

• LVTTL compatible inputs and outputs.

• Single 3.3V ± 0.3V power supply.

• MRS cycle with address key programs.

Latency (Access from column address)

Burst Length (1,2,4,8 & Full Page)

Data Sequence (Sequential & Interleave)

• All inputs are sampled at the positive going edge

of the system clock.

Pin Identification

Symbol Function

A0~A12 Address inputs

BA0, BA1 Select Bank

DQ0~DQ63 Data inputs/outputs

CLK0, CLK1 Clock Input

CKE0 Clock Enable Input

/CS0 Chip Select Input

/RAS Row address strobe

/CAS Column address strobe

/WE Write Enable

DQM0~7 DQM

Vcc Power Supply

Vss Ground

SDA Serial Address / Data I/O

SCL Serial Clock

NC No Connection

Summary of content (11 pages)

PAGE 1
44PIN PC133 Unbuffered SO-DIMM 256MB With 32M X 8 CL3 TS32MSS64V6F Description Pin Identification The TS32MSS64V6F is a 32M bit x 64 Synchronous Dynamic RAM high-density memory module. The Symbol Function Synchronous DRAMs in TSOP-II 400mil packages and a A0~A12 Address inputs 2048 bits serial EEPROM on a 144-pin printed circuit BA0, BA1 Select Bank board.
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144PIN PC133 Unbuffered SO-DIMM 256MB With 32M X 8 CL3 TS32MSS64V6F Dimensions B D A F C E G H K I J PCB: 09-6857 Side Transcend information Inc Millimeters Inches A 67.60 ± 0.200 2.661 ± 0.008 B 32.80 1.291 C 23.20 0.913 D 4.60 0.181 E 3.30 0.130 F 2.50 0.098 G 4.00 0.157 H 6.00 0.236 I 20.00 0.787 J 29.21 ± 0.200 1.150 ± 0.008 K 1.00 ± 0.100 0.039 ± 0.
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144PIN PC133 Unbuffered SO-DIMM 256MB With 32M X 8 CL3 TS32MSS64V6F Pinouts Pin Pin Pin Pin No Name No Name 01 Vss 49 DQ13 03 DQ0 51 DQ14 05 DQ1 53 DQ15 07 DQ2 55 Vss 09 DQ3 57 *CB0 11 Vcc 59 *CB1 13 DQ4 61 CLK0 15 DQ5 63 Vcc 17 DQ6 65 /RAS 19 DQ7 67 /WE 21 Vss 69 /CS0 23 DQM0 71 */CS1 25 DQM1 73 NC 27 Vcc 75 Vss 29 A0 77 *CB2 31 A1 79 *CB3 33 A2 81 Vcc 35 Vss 83 DQ16 37 DQ8 85 DQ17 39 DQ9 87 DQ18 41 DQ10 89 DQ19 43 DQ11 91 Vss 45 Vcc 93 DQ20 47 DQ12 95 DQ21 * Please refer Block Diagram Transcend informat
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144PIN PC133 Unbuffered SO-DIMM 256MB With 32M X 8 CL3 TS32MSS64V6F Block Diagram DQM2 SDA DQM3 SDA SCL A0 A1 A2 24C02 /CS CKE CLK DQM6 DQM DQM /CS CKE CLK DQM CKE CLK DQM0 A0~12,BA0~1 DQ0~8 /RAS /CAS 32Mx8 /WE SDRAM /CS CKE CLK /CS CKE CLK DQM4 A0~12,BA0~1 DQ0~8 /RAS /CAS 32Mx8 /WE SDRAM A0~12,BA0~1 DQ0~8 /RAS /CAS 32Mx8 /WE SDRAM /CS CKE CLK DQM5 A0~12,BA0~1 DQ0~8 /RAS /CAS 32Mx8 /WE SDRAM A0~12,BA0~1 DQ0~8 /RAS /CAS 32Mx8 /WE SDRAM DQM DQ0~8 /RAS /CAS 32Mx8 /WE SDRAM /CS CKE CLK DQM1 A0~12
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144PIN PC133 Unbuffered SO-DIMM 256MB With 32M X 8 CL3 TS32MSS64V6F ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on VDD supply relative to Vss Storage temperature Power dissipation Short circuit current Operating Temperature Note: Symbol VIN, VOUT VDD, VDDQ TSTG PD IOS TA Value -1.0~4.6 -1.0~4.6 -55~+150 8 50 0 ~ 70 Unit V V °C W mA °C Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
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144PIN PC133 Unbuffered SO-DIMM 256MB With 32M X 8 CL3 TS32MSS64V6F DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Parameter Operating Current (One Bank Active) Symbol ICC1 Precharge Standby Current ICC2P in power-down mode ICC2PS Precharge Standby Current ICC2N in non power-down mode Test Condition Burst Length =1 tRC≥tRC(min) IOL=0mA CKE≤VIL(max), tCC=10ns Value 960 Unit mA 16 mA CKE & CLK≤VIL(max), tCC=∞ 16 CKE≥VIH(min), /CS≥VIH(min), tCC=10ns 128
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144PIN PC133 Unbuffered SO-DIMM 256MB With 32M X 8 CL3 TS32MSS64V6F AC OPERATING TEST CONDITIONS (VDD = 3.3V±0.3V, TA = 0 to 70°C) Parameter AC Input levels (VIH/VIL) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Value 2.4/0.4 1.4 tr/tf=1/1 1.4 See Fig. 2 Unit V V ns V Vtt=1.4V 3.3V 50 Ohm 1200 Ohm Output VOH (DC)=2.4V, IOH=-2mA VOL (DC)=0.4V, I OL=2mA Output Z0=50 Ohm 50pF 50pF 870 Ohm (Fig.
PAGE 8
144PIN PC133 Unbuffered SO-DIMM 256MB With 32M X 8 CL3 TS32MSS64V6F AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Refer to the individual component, not the whole module. Parameter Symbol Value Min Max 7.5 Unit Note 1000 ns 1 5.4 ns 1, 2 CLK cycle time tCC CLK to valid output delay tSAC Output data hold time tOH 3.0 ns 2 CLK high pulse width CLK low pulse width Input setup time Input hold time CLK to output in Low-Z tCH tCL tSS tSH tSLZ 2.5 2.5 1.5 0.
PAGE 9
144PIN PC133 Unbuffered SO-DIMM 256MB With 32M X 8 CL3 TS32MSS64V6F SIMPLIFIED TRUTH TABLE COMMAND Register Mode Register Set Refresh Auto Refresh Entry Self Refresh Exit Bank Active & Row Addr.
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144PIN PC133 Unbuffered SO-DIMM 256MB With 32M X 8 CL3 TS32MSS64V6F Serial Presence Detect Specification Serial Presence Detect Byte No. Function Described Standard Specification Vendor Part 80 0 # of Bytes Written into Serial Memory 128bytes 1 Total # of Bytes of S.P.
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144PIN PC133 Unbuffered SO-DIMM 256MB With 32M X 8 CL3 TS32MSS64V6F 62 SPD Data Revision Code VER1.