Datasheet

ManualsBrandsTranscend Manualscomputer componentsTS32MMQ64V5M

214PIN DDR2 533 Micro-DIMM

256MB With 32Mx16 CL4

Description

The TS32MMQ64V5M is a 32M x 64bits DDR2-533

Micro-DIMM. The TS32MMQ64V5M consists of 4pcs

32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages

and a 2048 bits serial EEPROM on printed circuit board

with a 214Pin connector. The TS32MMQ64V5M is

available as non-ECC module in 1-row 32Mx64

organization and is intended for mounting into 214-pin

mezzanine connector sockets.

Synchronous design allows precise cycle control with the

use of system clock. Data I/O transactions are possible

on both edges of DQS. Range of operation frequencies,

programmable latencies allow the same device to be

useful for a variety of high bandwidth, high performance

memory system applications.

Features

• JEDEC standard 1.8V ± 0.1V Power supply

• VDDQ=1.8V ± 0.1V

• Max clock Freq: 267MHZ; 533Mb/s/Pin.

• Posted CAS

• Programmable CAS Latency: 3,4,5

• Programmable Additive Latency :0, 1,2,3 and 4

• Write Latency (WL) = Read Latency (RL)-1

• Burst Length: 4,8(Interleave/nibble sequential)

• Programmable sequential / Interleave Burst Mode

• Bi-directional Differential Data-Strobe (Single-ended

data-strobe is an optional feature)

• Off-Chip Driver (OCD) Impedance Adjustment

• MRS cycle with address key programs.

• On Die Termination

• Refresh and Self Refresh

Average Refresh Period 7.8us at lower then TCASE

85°C, 3.9us at 85°C < TCASE < 95 °C

• Serial presence detect with EEPROM

Placement

PCB: 09-2240

Transcend Information Inc.

Summary of content (11 pages)

PAGE 1
214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Description Placement The TS32MMQ64V5M is a 32M x 64bits DDR2-533 Micro-DIMM. The TS32MMQ64V5M consists of 4pcs J 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board with a 214Pin connector. The TS32MMQ64V5M is available as non-ECC module in 1-row B 32Mx64 A organization and is intended for mounting into 214-pin mezzanine connector sockets.
PAGE 2
14PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Dimensions Side Pin Identification Millimeters Inches Symbol Function A 54.0±0.15 2.126±0.006 A0~A12, BA0~BA2 Address input B 4.725 0.186 DQ0~DQ63 Data Input / Output. C 5.525 0.21800 DQS0~DQS7 Data strobe D 2.3 0.09 E 1.15 0.045 /DQS0~/DQS7 Differential Data strobe F 30.0±0.15 1.18±0.006 G 3.525 0.139 H 2.9 0.114 I 7.2 J K CK0, /CK0 CK1, /CK1 Clock Input. CKE0 Clock Enable Input. 0.
PAGE 3
214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Pinouts: Pin Pin Pin Pin No Name No Name 01 VREF 108 VSS 02 VSS 109 DQ4 03 DQ0 110 DQ5 04 DQ1 111 VSS 05 VSS 112 DM0 06 /DQS0 113 VSS 07 DQS0 114 DQ6 08 VSS 115 DQ7 09 DQ2 116 VSS 10 DQ3 117 DQ12 11 VSS 118 DQ13 12 DQ8 119 VSS 13 DQ9 120 DM1 14 VSS 121 VSS 15 NC 122 CK0 16 NC 123 /CK0 17 VSS 124 VSS 18 /DQS1 125 DQ14 19 DQS1 126 DQ15 20 VSS 127 VSS 21 DQ10 128 DQ20 22 DQ11 129 DQ21 23 VSS 130 VSS 24 DQ16 131 DM2 25 DQ17 132 VSS 26 VSS 133 DQ22 2
PAGE 4
214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Block Diagram /CS0 /DQS0 DQS0 DM0 /DQS DQS DM DQ 0 DQ 1 DQ 2 DQ 3 DQ 4 DQ 5 DQ 6 DQ 7 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 /DQS1 DQS1 DM1 /DQS DQS DM DQ 8 DQ 9 DQ 10 DQ 11 DQ 12 DQ 13 DQ 14 DQ 15 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 /DQS2 DQS2 DM2 /CS /DQS4 DQS4 DM4 /DQS DQS DM DQ 32 DQ 33 DQ 34 DQ 35 DQ 36 DQ 37 DQ 38 DQ 39 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 /DQS5 DQS5 DM5 /DQS DQS DM DQ 40 DQ
PAGE 5
214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Absolute Maximum DC Ratings Parameter Symbol Value Unit Notes Voltage on VDD relative to Vss VDD -1.0 ~ 2.3 V 1 Voltage on VDDQ pin relative to Vss VDDQ -0.5 ~ 2.3 V 1 Voltage on VDDL pin relative to Vss VDDL -0.5 ~ 2.3 V 1 Voltage on any pin relative to Vss VIN, VOUT -0.5 ~ 2.
PAGE 6
214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M IDD Specification parameters Definition ( IDD values are for full operating range of voltage and Temperature) Parameter Symbol Max.
PAGE 7
214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Input AC Logic Level Parameter Input High (Logic 1) Voltage, DQ, DQS and DM signals Input Low (Logic 0) Voltage, DQ, DQS and DM signals Symbol VIH(AC) VIL(AC) Min VREF + 0.250 Max Unit VREF - 0.250 V V Note AC Input Test Condition Condition Symbol Value Unit Note Input reference voltage VREF 0.5*VDDQ V 1 Input signal maximum peak to peak swing VSWING(MAX) 1.0 V 1 Input signal minimum slew rate SLEW 1.0 V/ns 2,3 Note: 1.
PAGE 8
214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Timing Parameters & Specifications (These AC characteristics were tested on the Component) Parameter Symbol tAC Min -500 Max +500 Unit ps tDQSCK -450 +450 ps CK high-level width tCH 0.45 0.55 tCK CK low-level width tCL 0.45 0.
PAGE 9
214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M /CAS to /CAS command delay tCCD 2 Write recovery time tWR 15 X ns Auto precharge write recovery + precharge time tDAL tWR+tRP X tCK Internal write to read command delay tWTR 7.5 X ns Internal read to precharge command delay tRTP 7.
PAGE 10
214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M SERIAL PRESENCE DETECT SPECIFICATION Serial Presence Detect Byte No. 0 1 2 3 4 Function Described # of Serial PD Bytes written during module production Total # of Bytes of S.P.
PAGE 11
214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M 45 46 Internal write to read command delay(=tWTR) Internal read to precharge command delay(=tRTP) Memory analysis probe characteristics Reserved DDR SDRAM Minimum Active to Active/Auto Refresh Time(tRC) DDR SDRAM Minimum Auto-Refresh to Active/Auto-Refresh Command Period (tRFC) DDR SDRAM Maximum Device Cycle Time (tCK max) DDR SDRAM DQS-DQ Skew for DQS and associated DQ signals (tDQSQ max) DDR SDRAM Read Data Hold Skew Factor (tQHS) PLL Relock