Datasheet

T
T
T
S
S
S
3
3
3
2
2
2
M
M
M
L
L
L
S
S
S
7
7
7
2
2
2
V
V
V
8
8
8
D
D
D
168PIN PC100 Unbuffered DIMM
256MB With 16Mx8 CL3
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Value Unit
Voltage on any pin relative to Vss VIN, VOUT -1.0~4.6 V
Voltage on VDD supply to Vss VDD, VDDQ -1.0~4.6 V
Storage temperature TSTG -55~+150 °C
Power dissipation PD 8 W
Short circuit current IOS 50 mA
Mean time between failure MTBF 50 year
Temperature Humidity Burning THB 85°C/85%, Static Stress °C-%
Temperature Cycling Test TC 0°C ~ 125°C Cycling °C
Note:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to Vss = 0V, TA = 0 to 70°C)
Parameter Symbol Min Typ Max Unit Note
Supply voltage VDD 3.0 3.3 3.6 V
Input high voltage VIH 2.0 3.0 VDD+0.3 V 1
Input low voltage VIL -0.3 0 0.8 V 2
Output high voltage VOH 2.4 - - V IOH=-2mA
Output low voltage VOL - - 0.4 V IOL=2mA
Input leakage current ILI -10 - 10 uA 3
Note:
1. VIH (max) = 5.6V AC .The overshoot voltage duration is 3ns.
2. VIL (min) = -2.0V AC .The undershoot voltage duration is 3ns.
3. Any input 0V VIN VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200mV)
Parameter Symbol Min Max Unit
Address (A0 ~A11, BA0 ~BA1)
/RAS, /CAS, /WE
CKE (CKE0 ~ CKE1)
Clock (CLK0 ~ CLK3)
/CS (/CS0 ~ /CS3)
DQM (DQM0 ~ DQM7)
DQ (DQ0 ~ DQ63)
CB (CB0 ~ CB7)
C
ADD
CIN
CCKE
CCLK
CC5
CDQM
COUT1
COUT2
50
50
28
18
18
13
13
13
95
95
50
25
30
20
18
18
pF
pF
pF
pF
pF
pF
pF
pF
Transcend Information Inc.
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