Datasheet

ManualsBrandsTranscend Manualscomputer componentsTS32MLS72V8D

168PIN PC100 Unbuffered DIMM

256MB With 16Mx8 CL3

Description

The TS32MLS72V8D is a 32M x 72bits Synchronous

Dynamic RAM high-density for PC-100. The

TS32MLS72V8D consists of 18pcs CMOS 16Mx8 bits

Synchronous DRAMs in TSOP-II 400mil packages and

a 2048 bits serial EEPROM on a 168-pin printed circuit

board. The TS32MLS72V8D is a Dual In-Line Memory

Module and is intended for mounting into 168-pin edge

connector sockets.

Synchronous design allows precise cycle control with

the use of system clock. I/O transactions are possible

on every clock cycle. Range of operation frequencies,

programmable latencies allow the same device to be

useful for a variety of high bandwidth, high performance

memory system applications.

Features

• Performance Range: PC-100 CL3

• Conformed to JEDEC Standard Spec.

• Burst Mode Operation.

• Auto and Self Refresh.

• CKE Power Down Mode.

• DQM Byte Masking (Read/Write)

• Serial Presence Detect (SPD) with serial EEPROM

• LVTTL compatible inputs and outputs.

• Single 3.3V ± 0.3V power supply.

• MRS cycle with address key programs.

Latency (Access from column address)

Burst Length (1,2,4,8 & Full Page)

Data Sequence (Sequential & Interleave)

• All inputs are sampled at the positive going edge of

the system clock.

Placement

PCB :09-7147

Transcend Information Inc.

Summary of content (11 pages)

PAGE 1
68PIN PC100 Unbuffered DIMM 256MB With 16Mx8 CL3 TS32MLS72V8D Placement Description The TS32MLS72V8D is a 32M x 72bits Synchronous Dynamic RAM high-density for PC-100. The TS32MLS72V8D consists of 18pcs CMOS 16Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and a 2048 bits serial EEPROM on a 168-pin printed circuit board. The TS32MLS72V8D is a Dual In-Line Memory Module and is intended for mounting into 168-pin edge connector sockets.
PAGE 2
168PIN PC100 Unbuffered DIMM 256MB With 16Mx8 CL3 TS32MLS72V8D Dimensions Pin Identification Side Millimeters Inches A 133.35±0.40 5.250±0.016 B 65.67000 2.585000 C 23.49000 0.925000 D 8.89000 0.350000 E 3.00000 0.118000 F 31.75±0.2000 Symbol A0~A11, BA0, BA1 Address input 1.250±0.0080 G 19.8000 0.780000 H 15.80 0.622 I 1.27±0.10 0.050±0.004 (Refer Placement) Transcend Information Inc. Function 2 DQ0~DQ63, C0~C7 Data Input / Output. CLK0~CLK3 Clock Input.
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168PIN PC100 Unbuffered DIMM 256MB With 16Mx8 CL3 TS32MLS72V8D Pinouts: Pin No 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 Pin Name Vss DQ0 DQ1 DQ2 DQ3 Vcc DQ4 DQ5 DQ6 DQ7 DQ8 Vss DQ9 DQ10 DQ11 DQ12 DQ13 Vcc DQ14 DQ15 *C0 *C1 Vss NC NC Vcc /WE DQM0 DQM1 /CS0 NC Vss A0 A2 A4 A6 A8 A10/AP BA1 Vcc Vcc CLK0 Pin No 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 8
PAGE 4
168PIN PC100 Unbuffered DIMM 256MB With 16Mx8 CL3 TS32MLS72V8D Block Diagram /RAS /WE /WE /WE /CS /CS /CS CKE CKE CKE 16Mx8 SDRAM DQM0 DQM1 DQM2 DQM3 A0~A11, BA0,BA1 DQ0~DQ7 A0~A11, BA0,BA1 DQ0~DQ7 A0~A11, BA0,BA1 DQ0~DQ7 A0~A11, BA0,BA1 DQ0~DQ7 /CAS CKE 16Mx8 SDRAM CLK /WE /CAS DQ0~DQ7 CKE 16Mx8 SDRAM CLK CKE0 /RAS /CS /CAS DQM /CS 16Mx8 SDRAM CLK /CS0 /RAS /RAS A0~A11, BA0,BA1 /CAS DQM /WE /WE A0~A11, BA0,BA1 DQ0~DQ7 16Mx8 SDRAM CLK /CAS DQM /RAS /CAS
PAGE 5
168PIN PC100 Unbuffered DIMM 256MB With 16Mx8 CL3 TS32MLS72V8D ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on VDD supply to Vss Storage temperature Power dissipation Short circuit current Mean time between failure Temperature Humidity Burning Temperature Cycling Test Note: Symbol VIN, VOUT VDD, VDDQ TSTG PD IOS MTBF THB TC Value -1.0~4.6 -1.0~4.
PAGE 6
168PIN PC100 Unbuffered DIMM 256MB With 16Mx8 CL3 TS32MLS72V8D DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Parameter Operating Current (One Bank Active) Symbol ICC1 Precharge Standby Current ICC2P in power-down mode ICC2PS ICC2N Precharge Standby Current in non power-down mode Active Standby Current in power-down mode Active Standby Current in non power-down mode (One Bank Active) ICC2NS Test Condition Burst Length =1 tRC≥tRC(min) IO=0mA Value Unit N
PAGE 7
168PIN PC100 Unbuffered DIMM 256MB With 16Mx8 CL3 TS32MLS72V8D AC OPERATING TEST CONDITIONS (VDD = 3.3V±0.3V, TA = 0 to 70°C) Parameter AC Input levels (VIH/VIL) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Value Unit 2.4/0.4 V 1.4 V tr/tf=1/1 ns 1.4 V See Fig. 2 Vtt=1.4V 3.3V 50 Ohm 1200 Ohm Output VOH (DC)=2.4V, IOH=-2mA VOL (DC)=0.4V, I OL=2mA Output Z0=50 Ohm 50pF 50pF 870 Ohm (Fig.
PAGE 8
168PIN PC100 Unbuffered DIMM 256MB With 16Mx8 CL3 TS32MLS72V8D AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Refer to the individual component, not the whole module.
PAGE 9
168PIN PC100 Unbuffered DIMM 256MB With 16Mx8 CL3 TS32MLS72V8D SIMPLIFIED TRUTH TABLE COMMAND CKEn-1 CKEn /CS /RAS /CAS /WE DQM BA0,1 A10/AP Register Mode Register Set H X L L L L X OP CODE Refresh Auto Refresh H H L L L H X X Self Entry Refresh Exit A11 A0~A9 1,2 3 L L H Note 3 L H H H H X X X X 3 X 3 Bank Active & Row Addr.
PAGE 10
168PIN PC100 Unbuffered DIMM 256MB With 16Mx8 CL3 TS32MLS72V8D Serial Presence Detect Specification Serial Presence Detect Function Described Standard Specification # of Bytes Written into Serial Memory 128bytes Total # of Bytes of S.P.
PAGE 11
168PIN PC100 Unbuffered DIMM 256MB With 16Mx8 CL3 TS32MLS72V8D 4 D 53 37 32 56 38 20 20 20 20 20 0 Variable Variable 0 64h F4 FF 54 53 33 32 73-90 Manufacturers Part Number TS32MLS72V8D 91-92 93-94 95-98 99-125 126 127 128~ By Manufacturer By Manufacturer 100MHz CL=3 Clock 0 Open Revision Code Manufacturing Date Assembly Serial Number Manufacturer Specific Data Intel Specification Frequency Intel Specification CAS# Latency/Clock Signal Support Unused Storage Locations Transcend Information Inc.