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TS32MLS64V6G

168PIN PC133 Unbuffered DIMM

256MB With 16Mx16 CL3

Transcend information Inc.

Description

The TS32MLS64V6G is a 32M bit x 64 Synchronous

Dynamic RAM high-density memory modules. The

TS32MLS64V6G consists of 8 piece of CMOS 16Mx16bits

Synchronous DRAMs in TFBGA 400mil packages and a

2048 bits serial EEPROM on a 168-pin printed circuit board.

The TS32MLS64V6G is a Dual In-Line Memory Module and

is intended for mounting into 168-pin edge connector

sockets.

Synchronous design allows precise cycle control with the

use of system clock. I/O transactions are possible on every

clock cycle. Range of operation frequencies, programmable

latencies allow the same device to be useful for a variety of

high bandwidth, high performance memory system

applications.

Features

• RoHS compliant products.

• Performance Range: PC133.

• Burst Mode Operation.

• Auto and Self Refresh.

• Serial Presence Detect (SPD) with serial

EEPROM

• LVTTL compatible inputs and outputs.

• Single 3.3V

+ 0.3V power supply.

• MRS cycle with address key programs.

Latency (Access from column address)

Burst Length (1,2,4,8 & Full Page)

Data Scramble (Sequential & Interleave)

• All inputs are sampled at the positive going edge

of the system clock.

Placement

PCB: 09-2410

Summary of content (11 pages)

PAGE 1
68PIN PC133 Unbuffered DIMM 256MB With 16Mx16 CL3 TS32MLS64V6G Description Placement The TS32MLS64V6G is a 32M bit x 64 Synchronous Dynamic RAM high-density memory modules. The TS32MLS64V6G consists of 8 piece of CMOS 16Mx16bits Synchronous DRAMs in TFBGA 400mil packages and a 2048 bits serial EEPROM on a 168-pin printed circuit board. The TS32MLS64V6G is a Dual In-Line Memory Module and is intended for mounting into 168-pin edge connector sockets.
PAGE 2
168PIN PC133 Unbuffered DIMM 256MB With 16Mx16 CL3 TS32MLS64V6G Pin Identification Dimensions Symbol Function Side Millimeters A 133.35±0.40 5.250±0.016 A0~A12 Address inputs B 65.67000 2.585000 BA0, BA1 Select Bank C 23.49000 0.925000 D 8.89000 0.350000 DQ0~DQ63 Data inputs/outputs E 3.00000 0.118000 CLK0~3 Clock Input F 22.225±0.200 0.875±0.00800 G 19.8000 0.788000 H 15.80 0.622 I 1.27±0.10 (Refer Placement) Transcend information Inc.
PAGE 3
168PIN PC133 Unbuffered DIMM 256MB With 16Mx16 CL3 TS32MLS64V6G Pinouts: Pin Pin Pin No Name No 01 Vss 43 02 DQ0 44 03 DQ1 45 04 DQ2 46 05 DQ3 47 06 Vcc 48 07 DQ4 49 08 DQ5 50 09 DQ6 51 10 DQ7 52 11 DQ8 53 12 Vss 54 13 DQ9 55 14 DQ10 56 15 DQ11 57 16 DQ12 58 17 DQ13 59 18 Vcc 60 19 DQ14 61 20 DQ15 62 21 *CB0 63 22 *CB1 64 23 Vss 65 24 NC 66 25 NC 67 26 Vcc 68 27 /WE 69 28 DQM0 70 29 DQM1 71 30 /CS0 72 31 NC 73 32 Vss 74 33 A0 75 34 A2 76 35 A4 77 36 A6 78 37 A8 79 38 A10/AP 80 39 BA1 81 40 Vcc 82 41 Vcc 83
PAGE 4
168PIN PC133 Unbuffered DIMM 256MB With 16Mx16 CL3 TS32MLS64V6G Block Diagram DQ0~DQ63 A0~A12, BA0,BA1 DQ0~DQ15 A0~A12, BA0,BA1 DQ0~DQ15 A0~A12, BA0,BA1 DQ0~DQ15 A0~A12, BA0,BA1 DQ0~DQ15 /RAS /RAS /RAS /RAS /RAS /CS /CS CLK0 CLK CKE0 CKE CLK CKE CLK CKE /CAS CLK CKE 16Mx16 SDRAM UDQM /CS UDQM /CS LDQM /CS0 UDQM /WE /CAS LDQM 16Mx16 /CAS SDRAM /WE UDQM 16Mx16 /CAS SDRAM /WE LDQM /WE 16Mx16 /CAS SDRAM /WE LDQM A0~A12,BA0,BA1 DQM4 DQM0 DQM5 DQM1 DQM6 DQM2 DQM7 DQM3
PAGE 5
168PIN PC133 Unbuffered DIMM 256MB With 16Mx16 CL3 TS32MLS64V6G ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on any pin relative to Vss VIN, VOUT -1.0~4.6 V Voltage on VDD supply relative to Vss VDD, VDDQ -1.0~4.6 V °C Storage temperature TSTG -55~+150 Power dissipation PD 8 W Short circuit current LOS 50 mA °C Operating Temperature TA 0~70 Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
PAGE 6
168PIN PC133 Unbuffered DIMM 256MB With 16Mx16 CL3 TS32MLS64V6G Operating Current (One Bank Active) Precharge Standby Current in power-down mode Precharge Standby Current in non power-down mode Burst Length =1 tRC≥tRC(min) IOL=0mA ICC2P CKE≤VIL(max), tCC=10ns ICC1 520 16 ICC2PS CKE & CLK≤VIL(max), tCC=∞ 16 ICC2N CKE≥VIH(min), /CS≥VIH(min), tCC=10ns 160 mA 1 mA mA Input signals are changed one time during 20ns 80 ICC2NS CKE≥VIH(min), CLK≤VIL(max), tCC=∞ Input signals are stable Active Standby
PAGE 7
168PIN PC133 Unbuffered DIMM 256MB With 16Mx16 CL3 TS32MLS64V6G Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition 1.4 tr/tf=1/1 1.4 See Fig. 2 Vtt=1.4V 3.3V 50 Ohm 1200 Ohm Output VOH (DC)=2.4V, IOH=-2mA VOL (DC)=0.4V, I OL=2mA Output Z0=50 Ohm 50pF 50pF 870 Ohm V ns V (Fig. 2) AC Output Load Circuit (Fig.
PAGE 8
168PIN PC133 Unbuffered DIMM 256MB With 16Mx16 CL3 TS32MLS64V6G AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Refer to the individual component, not the whole module. Parameter Symbol CLK cycle time tCC CLK to valid output delay tSAC Output data hold time tOH CLK high pulse width CLK low pulse width Input setup time Input hold time CLK to output in Low-Z tCH tCL tSS tSH tSLZ CLK to output in Hi-Z tSHZ Note: Value Unit Note 1000 ns 1 5.
PAGE 9
168PIN PC133 Unbuffered DIMM 256MB With 16Mx16 CL3 TS32MLS64V6G SIMPLIFIED TRUTH TABLE COMMAND Register Mode Register Set CKEn-1 CKEn /CS /RAS /CAS /WE DQM H X L L L L X OP CODE L L L H X X L H H H X X H X X X Auto Refresh Entry Refresh Self Refresh Exit Bank Active & Row Addr.
PAGE 10
168PIN PC133 Unbuffered DIMM 256MB With 16Mx16 CL3 TS32MLS64V6G Serial Presence Detect Specification Serial Presence Detect Byte No. Standard Specification Vendor Part 0 # of Bytes Written into Serial Memory 128bytes 80 1 Total # of Bytes of S.P.
PAGE 11
168PIN PC133 Unbuffered DIMM 256MB With 16Mx16 CL3 TS32MLS64V6G 36-61 Superset Information - 00 62 SPD Data Revision Code JEDEC2 02 63 Checksum for Bytes 0-62 AA AA Transcend 7F, 4F T 54 64-71 72 Manufacturers JEDEC ID Code per JEP-108E Manufacturing Location 54 53 33 32 4D 4C 73-90 Manufacturers Part Number TS32MLS64V6G 53 36 34 56 36 47 20 20 20 20 20 20 91-92 Revision Code - 0 93-94 Manufacturing Date By Manufacturer Variable 95-98 Assembly Serial Number By Manufacturer