Datasheet

ManualsBrandsTranscend Manualscomputer componentsTS32MLD72V3F

184PIN DDR333 ECC Unbuffered DIMM

256MB with 32Mx8 CL2.5

Transcend Information Inc.

Description

The TS32MLD72V3F is a 32Mx72bits Double Data Rate

SDRAM high-density for DDR266. The TS32MLD72V3F

consists of 9pcs CMOS 32Mx8 bits Double Data Rate

SDRAMs in 66 pin TSOP-II 400mil packages and a 2048

bits serial EEPROM on a 184-pin printed circuit board.

The TS32MLD72V3F is a Dual In-Line Memory Module

and is intended for mounting into 184-pin edge connector

sockets.

Synchronous design allows precise cycle control with the

use of system clock. Data I/O transactions are possible

on both edges of DQS. Range of operation frequencies,

programmable latencies allow the same device to be

useful for a variety of high bandwidth, high performance

memory system applications.

Features

• RoHS compliant products.

• Power supply: VDD: 2.5V ± 0.2V, VDDQ: 2.5V ± 0.2V

• Max clock Freq: 166MHZ

• Double-data-rate architecture; two data transfers per

clock cycle

• Differential clock inputs (CK and /CK)

• Burst Mode Operation.

• Auto and Self Refresh.

• Data I/O transactions on both edge of data strobe.

• Edge aligned data output, center aligned data input.

• Serial Presence Detect (SPD) with serial EEPROM

• SSTL-2 compatible inputs and outputs.

• MRS cycle with address key programs.

CAS Latency (Access from column address): 2.5

Burst Length (2,4,8 )

Data Sequence (Sequential & Interleave)

Placement

PCB : 09-1670

Summary of content (11 pages)

PAGE 1
84PIN DDR333 ECC Unbuffered DIMM 256MB with 32Mx8 CL2.5 TS32MLD72V3F Description Placement The TS32MLD72V3F is a 32Mx72bits Double Data Rate SDRAM high-density for DDR266. The TS32MLD72V3F consists of 9pcs CMOS 32Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages and a 2048 bits serial EEPROM on a 184-pin printed circuit board. The TS32MLD72V3F is a Dual In-Line Memory Module and is intended for mounting into 184-pin edge connector sockets.
PAGE 2
184PIN DDR333 ECC Unbuffered DIMM 256MB with 32Mx8 CL2.5 TS32MLD72V3F Dimensions Pin Identification Side Millimeters Inches A 133.35±0.20 5.250±0.008 B 72.39 2.850 C 6.35 0.250000 D 2.20 0.0870 E 31.75±0.20 1.250±0.00800 F 19.80 0.779 G 4.00 0.157 H 12.00 0.472 I 1.27±0.10 0.050±0.004 Symbol A0~A12, BA0, BA1 DQ0~DQ63 CB0~CB7 DQS0~DQS7 Address input Data Input / Output. Data strobe input/output CK0, /CK0 CK1, /CK1 Clock Input.
PAGE 3
184PIN DDR333 ECC Unbuffered DIMM 256MB with 32Mx8 CL2.
PAGE 4
184PIN DDR333 ECC Unbuffered DIMM 256MB with 32Mx8 CL2.
PAGE 5
184PIN DDR333 ECC Unbuffered DIMM 256MB with 32Mx8 CL2.5 TS32MLD72V3F ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on any pin relative to Vss VIN, VOUT -0.5 ~ 3.6 V Voltage on VDD supply to Vss VDD, VDDQ -1.0 ~ 3.6 V Storage temperature TSTG -55~+150 °C Power dissipation PD 13.5 W Short circuit current IOS 50 mA °C TA 0 ~ 70 Operating Temperature Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
PAGE 6
184PIN DDR333 ECC Unbuffered DIMM 256MB with 32Mx8 CL2.5 TS32MLD72V3F DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Symbol Max. Unit Operating current - One bank Active-Precharge; tRC=tRCmin; tCK= tCK min DQ, DM and DQS inputs changing twice per clock cycle; Address and control inputs changing once per clock cycle Parameter IDD0 1035 mA Operating current - One bank Active-Read-Precharge; Burst=2; tRC=tRC min; CL=2.
PAGE 7
184PIN DDR333 ECC Unbuffered DIMM 256MB with 32Mx8 CL2.5 TS32MLD72V3F AC OPERATING CONDITIONS Parameter Symbol Min Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.31 Input Low (Logic 0) Voltage, DQ, DQS and DM signals VIL(AC) Input Differential Voltage, CK and /CK inputs VID(AC) Input Crossing Point Voltage, CK and /CK inputs VIX(AC) Note: Max Unit V VREF - 0.31 V 0.7 VDDQ + 0.6 V 0.5*VDDQ - 0.2 0.5*VDDQ + 0.2 V 1. VIH(max)=4.2V.
PAGE 8
184PIN DDR333 ECC Unbuffered DIMM 256MB with 32Mx8 CL2.5 TS32MLD72V3F AC Timming Parameters & Specifications (These AC characteristics were tested on the Component) Parameter Row cycle time Refresh row cycle time Row active time /RAS to /CAS delay Row active to Row active delay Row active to Row active delay Write recovery time Last data in to Read command Col. Address to Col.
PAGE 9
184PIN DDR333 ECC Unbuffered DIMM 256MB with 32Mx8 CL2.5 TS32MLD72V3F SIMPLIFIED TRUTH TABLE COMMAND Extended Mode Register Set Mode Register Set Auto Refresh Entry Self Refresh Exit Register Register Refresh Bank Active & Row Addr.
PAGE 10
184PIN DDR333 ECC Unbuffered DIMM 256MB with 32Mx8 CL2.5 TS32MLD72V3F Serial Presence Detect Specification Serial Presence Detect Byte No. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Function Described 16 17 18 19 20 # of Bytes Written into Serial Memory Total # of Bytes of S.P.
PAGE 11
184PIN DDR333 ECC Unbuffered DIMM 256MB with 32Mx8 CL2.5 TS32MLD72V3F 62 63 64-71 72 73-90 91-92 93-94 95-98 99-127 128~255 SPD Data Revision Code Checksum for Bytes 0-62 Manufacturers JEDEC ID Manufacturing Location Transcend T Manufacturers Part Number TS32MLD72V3F Revision Code Manufacturing Date Assembly Serial Number Manufacturer Specific Data Unused Storage Locations Transcend Information Inc.