Datasheet

ManualsBrandsTranscend Manualscomputer componentsTS2M3660G

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8MB 72 PIN FAST PAGE

DRAM SIMM With 1Mx16 5VOLT

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Transcend Information Inc.

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Description

The TS2M3660G is a 2M by 36-bit dynamic RAM module

with 4 pcs of 1Mx16 and 8 pcs 1Mx1 DRAMs assembled

on the printed circuit board.

The TS2M3660G is optimized for application to systems

which require high density and large capacity along with

compact sizing.

Placement

Features

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Fast Page Mode Operation.

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Single +5.0V

10% power supply.

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1,024 cycles refresh.

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Lower power consumption.

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CAS before RAS refresh, RAS only refresh, Hidden

refresh, Fast Page Mode, Read_Modify_Write

capability.

TS4M3260

Access time from /RAS

RAC

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60ns

Access time from /CAS

CAC

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15ns

Random read/write cycle time

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110ns

Page mode cycle time

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40ns

Dimensions

Side Millimeters Inches

A 107.95

0.20 4.520

0.008

B 6.35 0.250

C 3.38 0.133

D 2.03 0.080

E 25.40

0.20 0.850

0.008

F 10.16 0.400

G 6.35 0.250

H 1.27

0.10 0.050

0.004

PCB : 09 - 5215G

Summary of content (7 pages)

PAGE 1
8MB 72 PIN FAST PAGE DRAM SIMM With 1Mx16 5VOLT TS2M3660G Description Features The TS2M3660G is a 2M by 36-bit dynamic RAM module • Fast Page Mode Operation. with 4 pcs of 1Mx16 and 8 pcs 1Mx1 DRAMs assembled • Single +5.0V ± 10% power supply. on the printed circuit board. • 1,024 cycles refresh. The TS2M3660G is optimized for application to systems • Lower power consumption.
PAGE 2
8MB 72 PIN FAST PAGE DRAM SIMM With 1Mx16 5VOLT TS2M3660G TS2M3660G -- Block Diagram A0~A9 A0~A9 A0~A9 A0~A9 A0~A9 A0~A9 DQ0~DQ15 DQ0 DQ0 DQ0~DQ15 DQ0 DQ0 /RAS /RAS /RAS /RAS /RAS /CAS /LCAS /HCAS /LCAS 1Mx1 /WE DRAM /HCAS A0~A9 A0~A9 A0~A9 A0~A9 A0~A9 DQ0~DQ15 DQ0 DQ0 DQ0~DQ15 DQ0 DQ0 /RAS /RAS /RAS 1Mx1 /WE DRAM /CAS /HCAS /RAS /RAS 1Mx1 /WE DRAM /WE Pinouts 1Mx16 DRAM 1Mx1 /WE DRAM /LCAS 1Mx1 /WE DRAM /HCAS /CAS /RAS 1Mx16 DRAM /LCAS Pin Name Vss
PAGE 3
8MB 72 PIN FAST PAGE DRAM SIMM With 1Mx16 5VOLT TS2M3660G ABSOLUTE MAXIMUM RATINGS* Item Symbol Rating Unit VIN, VOUT -1 to +7.0 V Voltage on Vcc supply relative to Vss Vcc -1 to +7.0 V Storage temperature Tstg -55 to +150 °C Power dissipation PD 12 W Short circuit output current IOS 50 mA Voltage on any pin relative to Vss Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
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8MB 72 PIN FAST PAGE DRAM SIMM With 1Mx16 5VOLT TS2M3660G DC AND OPERATION CHARACTERISTICS (Recommended operating conditions unless otherwise noted) Symbol Min Max Unit ICC1 - 980 mA ICC2 - 24 mA ICC3 - 980 mA ICC4 - 780 mA ICC5 - 12 mA ICC6 - 980 mA II(L) IO(L) -10 -5 60 10 uA uA VOH VOL 2.4 - 0.
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8MB 72 PIN FAST PAGE DRAM SIMM With 1Mx16 5VOLT TS2M3660G CAPACITANCE (TA = 25°C, Vcc = 5V, f = 1MHz) Item Symbol Input capacitance (A0~A11) Input capacitance (/WE) Input capacitance (/RAS0, /RAS2) Input capacitance (/CAS0~/CAS3) Data input/output capacitance (D0~D31) Min Max Unit - 84 104 54 44 30 pF pF pF pF pF CIN1 CIN2 CIN3 CIN4 CDQ AC CHARACTERISTICS (0 TA 70 Vcc=5.0V 10%, See notes 1, 2) Test condition: Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.
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8MB 72 PIN FAST PAGE DRAM SIMM With 1Mx16 5VOLT TS2M3660G AC CHARACTERISTICS (0 TA 70 Vcc=5.0V 10%, See notes 1, 2) Test condition: Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.
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8MB 72 PIN FAST PAGE DRAM SIMM With 1Mx16 5VOLT TS2M3660G NOTES 1. An initial pause of 200us is required after power-up followed by any 8 /RAS-only or /CAS-before-/RAS refresh cycles before proper device operation is achieved. 2. Input voltage levels are VIH/VIL. VIH(min) and VIL(max) are reference levels for measuring timing of input signals. Transition times are measured between VIH(min) and VIL(max) and are assumed to be 5ns for all inputs. 3.