Datasheet
T
T
T
S
S
S
1
1
1
6
6
6
M
M
M
S
S
S
S
S
S
6
6
6
4
4
4
V
V
V
1
1
1
E
E
E
D
D
D
144PIN PC66 Unbuffered SO-DIMM
128MB With 16Mx8 CL3
Description
The TS16MSS64V1ED is a 16M bit x 64 Synchronous
Dynamic RAM high-density memory modules. The
TS16MSS64V1ED consists of 8 piece of CMOS
4Mx8bitsx4banks Synchronous DRAMs in TSOP-II
400mil packages and a 2048 bits serial EEPROM on a
144-pin printed circuit board. The TS16MSS64V1ED is a
Dual In-Line Memory Module and is intended for
mounting into 144-pin edge connector sockets.
Synchronous design allows precise cycle control with the
use of system clock. I/O transactions are possible on
every clock cycle. Range of operation frequencies,
programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
Features
• Performance Range: Speed 66MHz.
• Burst Mode Operation.
• Auto and Self Refresh.
• Serial Presence Detect (SPD) with serial EEPROM
• LVTTL compatible inputs and outputs.
• Single 3.3V ± 0.3V power supply.
• MRS cycle with address key programs.
Latency (Access from column address)
Burst Length (1,2,4,8 & Full Page)
Data Sequence (Sequential & Interleave)
• All inputs are sampled at the positive going edge of
the system clock
Pin Identification
Symbol Function
A0~A11 Address inputs
BA0, BA1 Select Bank
DQ0~DQ63 Data inputs/outputs
CLK0, CLK1 Clock Input
CKE0 Clock Enable Input
/CS0 Chip Select Input
/RAS Row address strobe
/CAS Column address strobe
/WE Write Enable
DQM0~7 DQM
Vcc Power Supply
Vss Ground
SDA Serial Address / Data I/O
SCL Serial Clock
NC No Connection
Transcend Information Inc.
1