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TS16MSS64V1EC

144PIN PC66 Unbuffered SO-DIMM

128MB With 8Mx16 CL3

Description

The TS16MSS64V1EC is a 16M bit x 64 Synchronous

Dynamic RAM high-density memory modules. The

TS16MSS64V1EC consists of 8 piece of CMOS 8Mx16bit

with 4banks Synchronous DRAMs in TSOP-II 400mil

packages and a 2048 bits serial EEPROM on a 144-pin

printed circuit board. The TS16MSS64V1EC is a Dual

In-Line Memory Module and is intended for mounting into

144-pin edge connector sockets.

Synchronous design allows precise cycle control with the

use of system clock. I/O transactions are possible on

every clock cycle. Range of operation frequencies,

programmable latencies allow the same device to be

useful for a variety of high bandwidth, high performance

memory system applications.

Features

• Performance Range: Speed 66MHz.

• Burst Mode Operation.

• Auto and Self Refresh.

• Serial Presence Detect (SPD) with serial EEPROM

• LVTTL compatible inputs and outputs.

• Single 3.3V ± 0.3V power supply.

• MRS cycle with address key programs.

Latency (Access from column address)

Burst Length (1,2,4,8 & Full Page)

• Data Sequence (Sequential & Interleave)

• All inputs are sampled at the positive going edge of

the system clock.

Placement

PCB: 09-6750

Transcend information Inc.

Summary of content (11 pages)

PAGE 1
44PIN PC66 Unbuffered SO-DIMM 128MB With 8Mx16 CL3 TS16MSS64V1EC Description Placement The TS16MSS64V1EC is a 16M bit x 64 Synchronous Dynamic RAM high-density memory modules. The TS16MSS64V1EC consists of 8 piece of CMOS 8Mx16bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages and a 2048 bits serial EEPROM on a 144-pin B printed circuit board. The TS16MSS64V1EC is a Dual D In-Line Memory Module and is intended for mounting into A 144-pin edge connector sockets.
PAGE 2
144PIN PC66 Unbuffered SO-DIMM 128MB With 8Mx16 CL3 TS16MSS64V1EC Dimensions Side Pin Identification Millimeters Inches Symbol Function A 67.60 ± 0.200 2.661 ± 0.008 A0~A11 Address inputs B 32.80 1.291 BA0, BA1 Select Bank C 23.20 0.913 DQ0~DQ63 Data inputs/outputs D 4.60 0.181 CLK0, CLK1 Clock Input E 3.30 0.130 CKE0, CKE1 Clock Enable Input F 2.50 0.098 /CS0, /CS1 Chip Select Input G 2.55 0.100 /RAS Row address strobe H 4.00 0.
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144PIN PC66 Unbuffered SO-DIMM 128MB With 8Mx16 CL3 TS16MSS64V1EC Pinouts Pin Pin Pin Pin No Name No Name 01 Vss 49 DQ13 03 DQ0 51 DQ14 05 DQ1 53 DQ15 07 DQ2 55 Vss 09 DQ3 57 NC 11 Vcc 59 NC 13 DQ4 61 CLK0 15 DQ5 63 Vcc 17 DQ6 65 /RAS 19 DQ7 67 /WE 21 Vss 69 /CS0 23 DQM0 71 */CS1 25 DQM1 73 NC 27 Vcc 75 Vss 29 A0 77 NC 31 A1 79 NC 33 A2 81 Vcc 35 Vss 83 DQ16 37 DQ8 85 DQ17 39 DQ9 87 DQ18 41 DQ10 89 DQ19 43 DQ11 91 Vss 45 Vcc 93 DQ20 47 DQ12 95 DQ21 * Please refer Block Diagram Transcend information Inc.
PAGE 4
144PIN PC66 Unbuffered SO-DIMM 128MB With 8Mx16 CL3 TS16MSS64V1EC /CS CKE CLK /CS CKE CLK /CS CKE CLK /CS CKE CLK DQM2 DQM3 SDA SCL A0 A1 A2 24C02 A0~11,BA0~1 DQ0~15 /RAS /CAS 8Mx16 /WE SDRAM /CS CKE CLK DQM4 DQM5 SCL A0~11,BA0~1 DQ0~15 /RAS /CAS 8Mx16 /WE SDRAM /CS CKE CLK DQM6 DQM7 LDQM UDQM /CS CKE CLK DQM0 DQM1 SDA A0~11,BA0~1 DQ0~15 /RAS /CAS 8Mx16 /WE SDRAM LDQM UDQM A0~11,BA0~1 DQ0~15 /RAS /CAS 8Mx16 /WE SDRAM LDQM UDQM /CS CKE CLK LDQM UDQM A0~11,BA0~1 DQ0~15 /RAS /CAS 8Mx16 /WE SDR
PAGE 5
144PIN PC66 Unbuffered SO-DIMM 128MB With 8Mx16 CL3 TS16MSS64V1EC ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on VDD supply relative to Vss Storage temperature Power dissipation Short circuit current Mean time between failure Temperature Humidity Burning Temperature Cycling Test Note: Symbol VIN, VOUT VDD, VDDQ TSTG PD IOS MTBF THB TC Value -1.0~4.6 -1.0~4.
PAGE 6
144PIN PC66 Unbuffered SO-DIMM 128MB With 8Mx16 CL3 TS16MSS64V1EC DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Parameter Operating Current (One Bank Active) Symbol ICC1 Precharge Standby Current ICC2P in power-down mode ICC2PS Precharge Standby Current ICC2N in non power-down mode Test Condition Value Unit Note Burst Length =1 tRC≥tRC(min) IOL=0mA CKE≤VIL(max), tCC=10ns 520 mA 1 16 mA CKE & CLK≤VIL(max), tCC=∞ 16 CKE≥VIH(min), /CS≥VIH(min), tCC
PAGE 7
144PIN PC66 Unbuffered SO-DIMM 128MB With 8Mx16 CL3 TS16MSS64V1EC AC OPERATING TEST CONDITIONS (VDD = 3.3V±0.3V, TA = 0 to 70°C) Parameter AC Input levels (VIH/VIL) Value Unit 2.4/0.4 V 1.4 V tr/tf=1/1 ns 1.4 V Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition See Fig. 2 Vtt=1.4V 3.3V 50 Ohm 1200 Ohm Output VOH (DC)=2.4V, IOH=-2mA VOL (DC)=0.4V, I OL=2mA Output Z0=50 Ohm 50pF 50pF 870 Ohm (Fig.
PAGE 8
144PIN PC66 Unbuffered SO-DIMM 128MB With 8Mx16 CL3 TS16MSS64V1EC AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Refer to the individual component, not the whole module.
PAGE 9
144PIN PC66 Unbuffered SO-DIMM 128MB With 8Mx16 CL3 TS16MSS64V1EC SIMPLIFIED TRUTH TABLE COMMAND Register CKEn-1 CKEn Mode Register Set Auto Refresh Refresh Self Refresh H Entry Exit Bank Active & Row Addr.
PAGE 10
144PIN PC66 Unbuffered SO-DIMM 128MB With 8Mx16 CL3 TS16MSS64V1EC Serial Presence Detect Specification Serial Presence Detect Byte No. Standard Specification Vendor Part 0 # of bytes written into Serial Memory 128bytes 80 1 Total # of bytes of S.P.
PAGE 11
144PIN PC66 Unbuffered SO-DIMM 128MB With 8Mx16 CL3 TS16MSS64V1EC 72 Manufacturing Location T 54 54 53 31 36 4D 53 73-90 Manufacturers Part Number TS16MSS64V1EC 53 36 34 56 31 45 43 20 20 20 20 20 91-92 Revision Code - 00 93-94 Manufacturing Date - 00 95-98 Assembly Serial Number - 00 99-125 Manufacturer Specific Data - 00 66MHz 66 126 System frequency for 66MHz 127 CAS Latency for 66MHz 128~ Unused Storage Locations Transcend information Inc.