Datasheet

T
T
T
S
S
S
1
1
1
6
6
6
M
M
M
L
L
L
S
S
S
7
7
7
2
2
2
V
V
V
8
8
8
D
D
D
128MB 168Pin PC100 CL3 ECC
SDRAM DIMM With 16Mx8 3.3VOLT
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Transcend Information Inc.
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ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Value Unit
Voltage on any pin relative to Vss V
IN
, V
OUT
-1.0~4.6 V
Voltage on V
DD
supply to Vss V
DD
, V
DDQ
-1.0~4.6 V
Storage temperature T
STG
-55~+150
°
C
Power dissipation P
D
9 W
Short circuit current I
OS
50 mA
Note:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device
reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to Vss = 0V, T
A
= 0 to 70
°
°°
°
C)
Parameter Symbol Min Type Max Unit Note
Supply voltage V
DD
3.0 3.3 3.6 V
Input high voltage V
IH
2.0 3.0 V
DD
+0.3 V 1
Input low voltage V
IL
-0.3 0 0.8 V 2
Output high voltage V
OH
2.4 - - V IOH=-2mA
Output low voltage V
OL
- - 0.4 V IOL=2mA
Input leakage current (Inputs) I
IL
-10 - 10 uA 3
Note:
1. V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.