Datasheet

ManualsBrandsTranscend Manualscomputer componentsTS16MLS72V6D

168Pin PC133 ECC Unbuffered DIMM

128MB With 16Mx8 CL3

Transcend Information Inc.

Description

The TS16MLS72V6D is a 16M x 72bits Synchronous

Dynamic RAM high density for PC-133. The

TS16MLS72V6D consists of 9pcs CMOS 16Mx8 bits

Synchronous DRAMs in TSOP-II 400mil packages and

a 2048 bits serial EEPROM on a 168-pin printed circuit

board. The TS16MLS72V6D is a Dual In-Line Memory

Module and is intended for mounting into 168-pin edge

connector sockets.

Synchronous design allows precise cycle control with

the use of system clock. I/O transactions are possible

on every clock cycle. Range of operation frequencies,

programmable latencies allow the same device to be

useful for a variety of high bandwidth, high

performance memory system applications.

Features

• Performance Range: PC-133

• Conformed to JEDEC Standard Spec.

• Burst Mode Operation.

• Auto and Self Refresh.

• CKE Power Down Mode.

• DQM Byte Masking (Read/Write)

• Serial Presence Detect (SPD) with serial EEPROM

• LVTTL compatible inputs and outputs.

• Single 3.3V ± 0.3V power supply.

• MRS cycle with address key programs.

Latency (Access from column address)

Burst Length (1,2,4,8 & Full Page)

Data Sequence (Sequential & Interleave)

• All inputs are sampled at the positive going edge of

the system clock.

Placement

PCB : 09-7149

Summary of content (11 pages)

PAGE 1
68Pin PC133 ECC Unbuffered DIMM 128MB With 16Mx8 CL3 TS16MLS72V6D Description Placement The TS16MLS72V6D is a 16M x 72bits Synchronous Dynamic RAM high density for PC-133. The TS16MLS72V6D consists of 9pcs CMOS 16Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and a 2048 bits serial EEPROM on a 168-pin printed circuit board. The TS16MLS72V6D is a Dual In-Line Memory Module and is intended for mounting into 168-pin edge connector sockets.
PAGE 2
168Pin PC133 ECC Unbuffered DIMM 128MB With 16Mx8 CL3 TS16MLS72V6D Dimensions Pin Identification Symbol Inches Function Side Millimeters A 133.35±0.40 5.250±0.016 A0~A11,BA0,BA1 Address input B 65.67 2.585 DQ0~DQ63 Data Input / Output. C 23.49 0.925 D 8.89 0.350 CB0~CB7 Check Bit. E 3.00 0.118 CLK0, CLK2 Clock Input. F 31.77±0.20 1.250±0.008 /CKE0 Clock Enable Input. G 19.80 0.788 /CS0,/CS2 Chip Select Input. H 15.80 0.622 I 1.27±0.10 0.050±0.
PAGE 3
168Pin PC133 ECC Unbuffered DIMM 128MB With 16Mx8 CL3 TS16MLS72V6D Pinouts: Pin Pin Pin No Name No 01 Vss 43 02 DQ0 44 03 DQ1 45 04 DQ2 46 05 DQ3 47 06 Vcc 48 07 DQ4 49 08 DQ5 50 09 DQ6 51 10 DQ7 52 11 DQ8 53 12 Vss 54 13 DQ9 55 14 DQ10 56 15 DQ11 57 16 DQ12 58 17 DQ13 59 18 Vcc 60 19 DQ14 61 20 DQ15 62 21 *CB0 63 22 *CB1 64 23 Vss 65 24 NC 66 25 NC 67 26 Vcc 68 27 /WE 69 28 DQM0 70 29 DQM1 71 30 /CS0 72 31 NC 73 32 Vss 74 33 A0 75 34 A2 76 35 A4 77 36 A6 78 37 A8 79 38 A10/AP 80 39 BA1 81 40 Vcc 82 41 Vcc
PAGE 4
168Pin PC133 ECC Unbuffered DIMM 128MB With 16Mx8 CL3 TS16MLS72V6D Block Diagram CB0~CB7 A0~A11, BA0,BA1 DQ0~DQ63 A0~A11, BA0,BA1 DQ0~DQ7 A0~A11, BA0,BA1 DQ0~DQ7 A0~A11, BA0,BA1 DQ0~DQ7 A0~A11, BA0,BA1 DQ0~DQ7 /RAS /RAS /RAS /RAS /RAS /CAS /CAS /WE /WE /WE /CS0 /CS /CS CKE0 CKE 16Mx8 16Mx8 /WE /WE /CS /CS /CS CKE CKE DQM0 DQM1 DQM2 DQM3 A0~A11, BA0,BA1 DQ0~DQ7 A0~A11, BA0,BA1 DQ0~DQ7 A0~A11, BA0,BA1 DQ0~DQ7 A0~A11, BA0,BA1 DQ0~DQ7 CKE DQM CLK /WE CLK /CAS SDRAM DQ
PAGE 5
168Pin PC133 ECC Unbuffered DIMM 128MB With 16Mx8 CL3 TS16MLS72V6D ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on any pin relative to Vss VIN, VOUT -1.0~4.6 V Voltage on VDD supply to Vss VDD, VDDQ -1.0~4.
PAGE 6
168Pin PC133 ECC Unbuffered DIMM 128MB With 16Mx8 CL3 TS16MLS72V6D DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Parameter Symbol Test Condition Burst Length =1 Operating Current ICC1 tRC≥tRC(min) (One Bank Active) IOL=0mA Precharge Standby Current ICC2P in power-down mode ICC2PS ICC2N Precharge Standby Current in non power-down mode Active Standby Current in power-down mode Active Standby Current in non power-down mode (One Bank Active) ICC2NS Unit Note
PAGE 7
168Pin PC133 ECC Unbuffered DIMM 128MB With 16Mx8 CL3 TS16MLS72V6D AC OPERATING TEST CONDITIONS (VDD = 3.3V±0.3V, TA = 0 to 70°C) Parameter AC Input levels (VIH/VIL) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Value Unit 2.4/0.4 V 1.4 V tr/tf=1/1 ns 1.4 V See Fig. 2 Vtt=1.4V 3.3V 50 Ohm 1200 Ohm Output VOH (DC)=2.4V, IOH=-2mA VOL (DC)=0.4V, I OL=2mA Output Z0=50 Ohm 50pF 50pF 870 Ohm (Fig.
PAGE 8
168Pin PC133 ECC Unbuffered DIMM 128MB With 16Mx8 CL3 TS16MLS72V6D AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Refer to the individual component, not the whole module. Parameter Symbol (value)Min (Valure)Max Unit Note CLK cycle time tCC 7.5 1000 ns 1 CLK to valid output delay tSAC 5.4 ns 1, 2 Output data hold time tOH 3.0 ns 2 CLK high pulse width tCH 2.5 ns 3 CLK low pulse width tCL 2.5 ns 3 Input setup time tSS 1.
PAGE 9
168Pin PC133 ECC Unbuffered DIMM 128MB With 16Mx8 CL3 TS16MLS72V6D SIMPLIFIED TRUTH TABLE COMMAND Register Mode Register Set Refresh Auto Refresh Entry Self Refresh Exit Bank Active & Row Addr.
PAGE 10
168Pin PC133 ECC Unbuffered DIMM 128MB With 16Mx8 CL3 TS16MLS72V6D Serial Presence Detect Specification Serial Presence Detect Byte No. Function Described Standard Specification Vendor Part 0 # of Bytes Written into Serial Memory 128bytes 80 1 Total # of Bytes of S.P.
PAGE 11
168Pin PC133 ECC Unbuffered DIMM 128MB With 16Mx8 CL3 TS16MLS72V6D 33 Command/Address Hold Time 0.8ns 08 34 Data Signal Setup Time 1.5ns 15 35 Data Signal Hold Time 0.