Datasheet

ManualsBrandsTranscend Manualscomputer componentsTS16MLS64V8C2

128MB 168PIN PC100 CL2

SDRAM DIMM With 8M X 16 3.3VOLT

Description

The TS16MLS64V8C2 is a 16M bit x 64 Synchronous

Dynamic RAM high-density for PC-100 CL2. The

TS16MLS64V8C2 consists of 8pcs CMOS 8Mx16 bits

Synchronous DRAMs in TSOP-II 400mil packages

and a 2048 bits serial EEPROM on a 168-pin printed

circuit board. The TS16MLS64V8C2 is a Dual In-Line

Memory Module and is intended for mounting into

168-pin edge connector sockets.

Synchronous design allows precise cycle control with

the use of system clock. I/O transactions are possible

on every clock cycle. Range of operation frequencies,

programmable latencies allow the same device to be

useful for a variety of high bandwidth, high

performance memory system applications.

Features

• Performance Range: PC-100 CL2.

• Conformed to JEDEC Standard 4 clocks.

• 16,777,216 words x 64 bits organization.

• Burst Mode Operation.

• Auto and Self Refresh.

• CKE Power Down Mode.

• DQM Byte Masking (Read/Write)

• Serial Presence Detect (SPD) with serial EEPROM

• LVTTL compatible inputs and outputs.

• Single 3.3V ± 0.3V power supply.

• MRS cycle with address key programs.

Latency (Access from column address)

Burst Length (1,2,4,8 & Full Page)

Data Scramble (Sequential & Interleave)

• All inputs are sampled at the positive going edge of

the system clock.

Dimensions

Side Millimeters Inches

A 133.35±0.40 5.250±0.016

B 65.67 2.585

C 23.49 0.925

D 8.89 0.350

E 3.00 0.118

F 31.75±0.20 1.250±0.008

G 19.80 0.788

H 15.80 0.622

I 1.27±0.10 0.050±0.004

(Refer Placement)

Pin Identification

Symbol Function

A0~A11, BA0,BA1 Address input

DQ0~DQ63 Data Input/Output.

CLK0~CLK3 Clock Input..

CKE0, CKE1 Clock Enable Input.

/CS0~/CS3 Chip Select Input.

/RAS Row Address Strobe

/CAS Column Address Strobe

/WE Write Enable

DQM0~DQM7 Data (DQ) Mask

SA0~SA2 Address in EEPROM

SCL Serial PD Clock

SDA Serial PD Add/Data input/output

Vcc +3.3 Voltage Power Supply

Vss Ground

NC No Connection

(Refer Block Diagram AND Pinouts)

Transcend information Inc.

Summary of content (13 pages)

PAGE 1
28MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 Description Dimensions The TS16MLS64V8C2 is a 16M bit x 64 Synchronous Side Millimeters Inches Dynamic RAM high-density for PC-100 CL2. The A 133.35±0.40 5.250±0.016 TS16MLS64V8C2 consists of 8pcs CMOS 8Mx16 bits B 65.67 2.585 Synchronous DRAMs in TSOP-II 400mil packages C 23.49 0.925 and a 2048 bits serial EEPROM on a 168-pin printed D 8.89 0.350 E 3.00 0.118 F 31.75±0.20 1.250±0.008 G 19.80 0.788 H 15.
PAGE 2
128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 Placement A B C E D E H G F PCB: 09-7130 Transcend information Inc.
PAGE 3
128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 Pinouts: Pin No 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 Pin Name Vss DQ0 DQ1 DQ2 DQ3 Vcc DQ4 DQ5 DQ6 DQ7 DQ8 Vss DQ9 DQ10 DQ11 DQ12 DQ13 Vcc DQ14 DQ15 NC NC Vss NC NC Vcc /WE DQM0 DQM1 /CS0 NC Vss A0 A2 A4 A6 A8 A10 BA1 Vcc Vcc CLK0 Transcend information Inc.
PAGE 4
128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.
PAGE 5
128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on any pin relative to Vss VIN, VOUT -1.0~4.6 V Voltage on VDD supply to Vss VDD, VDDQ -1.0~4.6 V TSTG -55~+150 °C Power dissipation PD 8 W Short circuit current IOS 50 mA MTBF 50 Years Storage temperature Mean time between failure Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
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128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.
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128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.
PAGE 8
128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 AC OPERATING TEST CONDITIONS (VDD = 3.3V±0.3V, TA = 0 to 70°C) Parameter AC Input levels (VIH/VIL) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Value Unit 2.4/0.4 V 1.4 V tr/tf=1/1 ns 1.4 V See Fig. 2 Vtt=1.4V 3.3V 50 Ohm 1200 Ohm Output Output VOH (DC)=2.4V, I OH=-2mA VOL (DC)=0.4V, I OL=2mA Z0=50 Ohm 50pF 50pF 870 Ohm (Fig.
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128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Refer to the individual component, not the whole module.
PAGE 10
128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 FREQUENCY vs. AC PARAMETER RELATIONSHIP TABLE Frequency CAS tRC tRAS TRP tRRD tRCD tCCD tCDL tRDL Latency 70ns 48ns 20ns 16ns 20ns 8ns 8ns 8ns 100MHz(10.0ns) 2 7 5 2 2 2 1 1 1 83MHz(12.0ns) 2 6 5 2 2 2 1 1 1 75MHz(13.0ns) 2 6 4 2 2 2 1 1 1 66MHz(15.0ns) 2 5 4 2 2 2 1 1 1 Transcend information Inc.
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128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.
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8MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 Serial Presence Detect Specification Serial Presence Detect Byte No. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Function Described # of Bytes Written into Serial Memory Total # of Bytes of S.P.
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128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 95-98 99-125 126 127 128~ Assembly Serial Number Manufacturer Specific Data Intel Specification Frequency Intel Specification CAS# Latency/Clock Signal Support Unused Storage Locations Transcend information Inc.