Datasheet

T
T
T
S
S
S
1
1
1
6
6
6
M
M
M
E
E
E
D
D
D
3
3
3
2
2
2
6
6
6
0
0
0
V
V
V
64MB 72 PIN EDO
DRAM SIMM With 16Mx4 3.3VOLT
CAPACITANCE (TA = 25°C, Vcc = 3.3V, f = 1MHz)
Item Symbol Min Max
Unit
Input capacitance (A0~A11)
Input capacitance (/WE)
Input capacitance (/RAS0, /RAS2)
Input capacitance (/CAS0~/CAS3)
Data input/output capacitance (D0~D31)
CIN1
CIN2
CIN3
CIN4
CDQ
-
-
-
-
-
50
66
38
24
17
pF
pF
pF
pF
pF
AC CHARACTERISTICS (0℃≦TA≦70℃, Vcc=3.3V±10%, See notes 1, 2)
Test condition: Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V, output loading CL=100pF
Parameter Symbol Min Max Unit
Note
Random read or write cycle time tRC 110 ns
A
ccess time from /RAS tRAC 60 ns 3,4,10
Access time from /CAS tCAC 15 ns 3,4,5
Access time from column address tAA 30 ns 3,10
/CAS to output in Low-Z tCLZ 3 ns 3
Output buffer turn-off delay tOFF 3 13 ns 6
Transition time(rise and fall) tT 1 50 ns 2
/RAS precharge time tRP 40 ns
/RAS pulse width tRAS 60 10K ns
/RAS hold time tRSH 15 ns
Transcend Information Inc.
7