Datasheet

T
T
T
S
S
S
1
1
1
6
6
6
M
M
M
E
E
E
D
D
D
3
3
3
2
2
2
6
6
6
0
0
0
V
V
V
64MB 72 PIN EDO
DRAM SIMM With 16Mx4 3.3VOLT
DC AND OPERATION CHARACTERISTICS (Recommended operationg conditions unless
otherwise noted)
TS16MED3260V
Symbol
Min Max
Unit
ICC1 - 1120 mA
ICC2 - 16 mA
ICC3 - 1120 mA
ICC4 - 880 mA
ICC5 - 8 mA
ICC6 - 1120 mA
II(L)
IO(L)
-10
-5
10
5
uA
uA
VOH
VOL
2.4
-
-
0.4
V
V
ICC1: Operation Current* (/RAS, /CAS, Address cycling @tRC=min)
ICC2: Standby Current (/RAS=/CAS=/W=VIH)
ICC3: /RAS Only Refresh Current* (/CAS=VIH, /RAS cycling @tRC=min)
ICC4: Hyper Page Mode Current* (/RAS=VIL, /CAS cycling: tPC=min)
ICC5: Standby Current (/RAS=/CAS=/W=Vcc-0.2V)
I
CC6: /CAS-Before-/RAS Refresh Current* (/RAS and /CAS cycling @tRC=min)
I
(IL): Input Leakage Current (Any input 0≦VIN≦Vcc+0.5V, all other pins not under test=0 V)
I(OL): Output Leakage Current (Data Out is disabled, 0V≦VOUT≦Vcc)
V
OH: Output High Voltage Level (IOH = -5mA)
VOL: Output Low Voltage Level (IOL = 4.2mA)
*Note: ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified
values are obtained with the output open. ICC is specified as an average current. In ICC1
and ICC3, address can be changed maximum once while /RAS=VIL. In ICC4, address can be
changed maximum once while /RAS= V
IL.. In ICC4, address can be changed maximum
once within one EDO mode cycle time, t
PC.
Transcend Information Inc.
6