Datasheet

T
T
T
S
S
S
1
1
1
2
2
2
8
8
8
M
M
M
L
L
L
Q
Q
Q
6
6
6
4
4
4
V
V
V
8
8
8
P
P
P
240PIN DDR2 800 Unbuffered DIMM
1024MB With 128Mx8 CL6
Transcend Information Inc.
1
Description Placement
The TS128MLQ64V8P is a 128M x 64bits DDR2-800
Unbuffered DIMM. The TS128MLQ64V8P consists of 8
pcs 128Mx8bits DDR2 SDRAMs in 68 ball FBGA
packages and a 2048 bits serial EEPROM on a 240-pin
printed circuit board. The TS128MLQ64V8P is a Dual
In-Line Memory Module and is intended for mounting into
240-pin edge connector sockets.
L
A
C
H
J
I
K
B
G
D
E
F
M
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible
on both edges of DQS. Range of operation frequencies,
programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
Features
• RoHS compliant products
• JEDEC standard 1.8V ± 0.1V Power supply
• Operating Temperature: TC = 0 to 85°C.
• VDDQ=1.8V ± 0.1V
• Max clock Freq: 400MHZ; 800Mb/S/Pin.
• Posted CAS
• Programmable CAS Latency: 4,5,6
• Programmable Additive Latency :0, 1,2,3 and 4
• Write Latency (WL) = Read Latency (RL)-1
• Burst Length: 4,8(Interleave/nibble sequential)
• Programmable sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended
PCB: 09-2285
data-strobe is an optional feature)
• Off-Chip Driver (OCD) Impedance Adjustment
• MRS cycle with address key programs.
• On Die Termination
• Serial presence detect with EEPROM