Datasheet

20
T5557
4517E–RFID–02/03
Figure 25. Measurement Setup for I
DD
and V
mod
7 Programming time
From last command gap
to re-enter read mode
(64 + 648 internal clocks)
T
prog
55.76msT
8 Endurance Erase all / Write all
(4)
n
cycle
100000 Cycles Q
9.1
Data retention
Top = 55
°C
(4)
t
retention
10 20 50 Years
9.2 Top = 150
°C
(4)
t
retention
96 hrs T
9.3 Top = 250
°C
(4)
t
retention
24 hrs Q
10 Resonance capacitor Mask option
(5)
C
r
70 78 86 pF T
11.1
Microdule capacitor
parameters
Capacitance tolerance
T
amb
C
r
313.5 330 346.5 pF T
11.2 Temperature coefficient TBD TBD TBD TBD TBD TBD
11.3 TBD TBD TBD TBD TBD TBD
Electrical Characteristics
T
amb
= +25°C; f
coil
= 125 kHz; unless otherwise specified
No. Parameters Test Conditions Symbol Min. Typ. Max. Unit Type*
*) Type means: T: directly or indirectly tested during production; Q: guaranteed based on initial product qualification data
Notes: 1. I
DD
measurement setup R = 100 k; V
CLK
= V
coil
= 5 V: EEPROM programmed to 00 ... 000 (erase all); chip in modulation
defeat. I
DD
= (V
OUTmax
- V
CLK
)/R
2. Current into Coil 1/Coil 2 is limited to 10 mA. The damping circuitry has the same structure as the e5550. The damping
characteristics are defined by the internally limited supply voltage (= minimum AC coil voltage)
3. V
mod
measurement setup: R = 2.3 k; V
CLK
= 3 V; setup with modulation enabled (see Figure 25).
4. Since EEPROM performance is influenced by assembly processes, Atmel confirms the parameters for DOW (tested dice
on uncutted wafer) delivery.
5. The tolerance of the on-chip resonance capacitor C
r
is ±10% at 3s over whole production. The capacitor tolerance is
±3% at 3
s on a wafer basis.
6. The tolerance of the microcodule resonance capacitor C
r
is ±5% at 3s over whole production.
Coil 1
T5557
Coil 2
Substrate
-
+
V
CLK
V
OUTmax
R
750
750
BAT68
BAT68