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TOSHIBA Photocoupler GaAℓAs Ired & Photo−Diode Array

TLP590B

2002-09-25

TOSHIBA Photocoupler GaAℓAs Ired & Photo−Diode Array

TLP590B

Telecommunication

Programmable Controllers

Mos Gate Driver

MOS FET Gate Driver

The TOSHIBA TLP590B consists of an aluminum galium arsenide

infrared emitting diode optically coupled to a series connected photo

−

diode array in a six lead plastic DIP package.

TLP590B is suitable for MOS FET gate driver.

• UL recognized: UL1577, file No. E67349

Short Current

Type

Name

Classification

(min.) I

Marking Of

Classification

C20 20μA 20

TLP590B

Standard 12μA

10mA

20, blank

(Note) Application type name for certification test, please

use standard product type name, i.e.

TLP590B(C20): TLP590B

Maximum Ratings

(Ta = 25°C)

Characteristics Symbol Rating Unit

Forward current I

50 mA

Forward current derating

(Ta ≥ 25°C)

ΔI

/ °C −0.5 mA / °C

Pulse forward current

(100μs pulse, 100 pps)

1 A

Reverse voltage V

3 V

LED

Junction temperature T

125 °C

Foward current I

50 μA

Reverse voltage V

10 V

Detector

Junction temperature T

125 °C

Storage temperature range T

stg

−55~125 °C

Operating temperature range T

opr

−40~85 °C

Lead soldering temperature

(10sec.)

sol

260 °C

Isolation voltage

(AC, 1 min., R.H. ≤ 60%) (Note 1)

2500 Vrms

(Note 1) Device considered a two terminal device: Pins 1, 2 and 3

shorted together, and pins 4 and 6 shorted together.

Pin Configuration(top view)

1. : Anode

2. : Cathode

3. : NC

4. : Cathode

6. : Anode

Unit in mm

TOSHIBA 11−7A9

Weight: 0.39g

Summary of content (5 pages)

PAGE 1
TLP590B TOSHIBA Photocoupler GaAℓAs Ired & Photo−Diode Array TLP590B Telecommunication Programmable Controllers Mos Gate Driver MOS FET Gate Driver Unit in mm The TOSHIBA TLP590B consists of an aluminum galium arsenide infrared emitting diode optically coupled to a series connected photo− diode array in a six lead plastic DIP package. TLP590B is suitable for MOS FET gate driver. • UL recognized: UL1577, file No. E67349 Short Current Type Name Short Current Classification (min.
PAGE 2
TLP590B Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit IF ― 20 25 mA Topr −25 ― 85 °C Forward current Operating temperature Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.2 1.4 1.
PAGE 3
TLP590B IF – Ta Allowable forward current IF (mA) 80 60 40 20 0 −20 ΔVF / ΔTa – IF −4.0 Forward voltage temperature coefficient ΔVF / ΔTa (mV / ℃) 100 −3.6 −3.2 −2.8 −2.4 −2.0 −1.6 −1.2 −0.8 0 20 40 60 80 100 0.1 0.3 IF – VF Pulse forward current IFP (mA) (mA) Forward current IF Ta = 25°C 30 10 5 3 1.4 1.6 1.8 Forward voltage VF 2.0 Ta = 25°C 500 300 100 50 30 10-3 3 10-2 3 Duty cycle ratio (V) 3 (mA) 1000 3 2.2 IF 30 10 5 Pulse width ≤ 100μs 3000 10 1.
PAGE 4
TLP590B t IO – VO Ta = 25°C RSH=2.4MΩ IF = 0mA 0 t 5mA Switching time Otuput current t ON , OFF (ms) 20 IO (μA) 40 10mA −20 15mA 20mA −40 25mA −60 0 2 4 6 Output voltage VO 8 10 3 IF=20mA RSH IF 300kΩ 510kΩ 1MΩ 2.4MΩ 0.1 0.03 VOUT 0V 300 10 3 3000 104 Short current ISC 300kΩ 2 Ta = 25°C 0 1 3 5 10 30 Forward current IF ISC – IF 10 5 3 1 0.5 0.3 50 Ta = 25°C 0.
PAGE 5
TLP590B RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.