Datasheet

TLP127
2007-10-01
2
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current I
F
50 mA
Forward current derating ΔI
F
/ °C −0.7 (Ta ≥ 53°C) mA / °C
Pulse forward current I
FP
1 (100μs pulse, 100pps) A
Reverse voltage V
R
5 V
LED
Junction temperature T
j
125 °C
Collector−emitter voltage V
CEO
300 V
Emitter−collector voltage V
ECO
0.3 V
Collector current I
C
150 mA
Collector power dissipation P
C
150 mW
Collector power dissipation
derating (Ta ≥ 25°C)
ΔP
C
/ °C −1.5 mW / °C
Detector
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55~125 °C
Operating temperature range T
opr
−55~100 °C
Lead soldering temperature T
sol
260 (10s) °C
Total package power dissipation P
T
200 mW
Total package power dissipation
derating (Ta ≥ 25°C)
ΔP
T
/ °C −2.0 mW / °C
Isolation voltage (Note 1) BV
S
2500 (AC, 1min., R.H.≤ 60%)
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: Pins 1, 3 shorted together and pins 4, 6 shorted together.