Datasheet

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TLP127

2007-10-01

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP127

Programmable Controllers

DC−Output Module

Telecommunication

The TOSHIBA mini flat coupler TLP127 is a small outline coupler,

suitable for surface mount assembly.

TLP127 consists of a gallium arsenide infrared emitting diode, optically

coupled to a darlington photo transistor with an integral base−emitter

resistor, and provides 300V V

CEO

• Collector−emitter voltage: 300 V (min.)

• Current transfer ratio: 1000% (min.)

• Isolation voltage: 2500Vrms (min.)

• UL recognized: UL1577, file no. E67349

• BSI approved: BS EN60065:2002, certificate no.8927

BS EN60950-1:2002, certificate no.8928

Pin Configurations

(top view)

TOSHIBA 11−4C1

Weight: 0.09 g

Unit in mm

1 : ANODE

3 : CATHODE

4 : EMITTER

6 : COLLECTOR

Summary of content (8 pages)

PAGE 1
TLP127 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP127 Programmable Controllers DC−Output Module Telecommunication Unit in mm The TOSHIBA mini flat coupler TLP127 is a small outline coupler, suitable for surface mount assembly. TLP127 consists of a gallium arsenide infrared emitting diode, optically coupled to a darlington photo transistor with an integral base−emitter resistor, and provides 300V VCEO. • Collector−emitter voltage: 300 V (min.) • Current transfer ratio: 1000% (min.
PAGE 2
TLP127 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA ΔIF / °C −0.7 (Ta ≥ 53°C) mA / °C Pulse forward current IFP 1 (100μs pulse, 100pps) A Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector−emitter voltage VCEO 300 V Emitter−collector voltage VECO 0.3 V Forward current LED Forward current derating IC 150 mA Collector power dissipation PC 150 mW Collector power dissipation derating (Ta ≥ 25°C) ΔPC / °C −1.
PAGE 3
TLP127 Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5V ― ― 10 μA Capacitance CT V = 0, f = 1 MHz ― 30 ― pF Collector−emitter breakdown voltage V(BR) CEO IC = 0.1 mA 300 ― ― V Emitter−collector breakdown voltage V(BR) ECO IE = 0.1 mA 0.
PAGE 4
TLP127 Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn−on time Test Condition VCC = 10 V, IC = 10 mA RL = 100 Ω ton Min. Typ. Max. ― 40 ― ― 15 ― ― 50 ― Turn−off time toff ― 15 ― Turn−on time tON ― 5 ― ― 40 ― ― 80 ― RL = 180 Ω VCC = 10 V, IF = 16 mA Storage time ts Turn−off time tOFF (Fig.1) Unit μs μs Recommended Operating Conditions Characteristic Symbol Min. Typ. Max.
PAGE 5
TLP127 IF – Ta PC – Ta 200 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) 100 80 60 40 20 0 −20 0 40 20 60 100 80 Ambient temperature Ta 160 120 80 40 0 −20 120 0 40 20 Ambient temperature (°C) Pulse width ≤ 100μs IF 300 Forward current Pulse forward current 500 100 50 30 10 3 10−3 10−2 3 10−1 3 Duty cycle ratio 30 10 5 3 1 0.5 0.3 100 3 DR 0.1 0.6 0.8 1.0 ΔVF / ΔTa – IF 1.2 1.4 VF 1.6 1.8 2.6 3.0 (V) IFP – VFP −3.
PAGE 6
TLP127 IC – VCE Ta = 25°C I C – IF 300 (mA) Collector current 100 50 30 Sample A 120 IC (mA) 4mA IC 10mA Collector current 160 2mA 80 1mA 40 Sample B 10 5 Ta = 25°C 3 VCE = 1.2V IF = 0.5mA 0 0.4 0.8 1.6 1.2 Collector–emitter voltage VCE = 1V 1 2.0 0.5 1 3 Forward current VCE (V) Switching Time – RL 30 IF 10000 Ta = 25°C Ta = 25°C Sample A VCE = 1.2V VCE = 1V 5000 300 IC / IF (%) tOFF(IF = 16mA) 100 tOFF(IF = 1.
PAGE 7
TLP127 IC – Ta ICEO – Ta 1 120 0 10 VCE = 1V 100 IF = 10mA 80 60 40 1mA 20 0 -40 −1 -20 0 20 40 Ambient temperature 60 Ta 80 100 80 100 (℃) VCE = 200V 150V 10 80V −2 VCE(sat) – Ta 1.2 10 10 Collector-emitter saturation voltage VCE(sat) (V) Collector dark current ICEO (μA) 10 Collector current IC (mA) 10 −3 IF = 1mA IC = 10mA 1.0 0.8 0.6 0.4 0.
PAGE 8
TLP127 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.