Datasheet

TLP124
2007-10-01
2
Current Transfer Ratio
Current Transfer Ratio (min.)
Ta = 25°C Ta = −25~75°C
Classification
I
F
= 1mA
V
CE
= 0.5V
I
F
= 0.5mA
V
CE
= 1.5V
I
F
= 1mA
V
CE
= 0.5V
Marking Of
Classification
Rank BV 200% 100% 100% BV
Standard 100% 50% 50% BV, Blank
(Note) Application type name for certification test, please use standard product type name, i. e.
TLP124 (BV): TLP124
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current I
F
50 mA
Forward current derating ΔI
F
/ °C −0.7 (Ta ≥ 53°C) mA / °C
Peak forward current
(100μs pulse, 100pps)
I
FP
1 A
Reverse voltage V
R
5 V
LED
Junction temperature T
j
125 °C
Collector−emitter voltage V
CEO
80 V
Emitter−collector voltage V
ECO
7 V
Collector current I
C
50 mA
Peak collector current
(10ms pulse, 100pps)
I
CP
100 mA
Power dissipation P
C
150 mW
Power dissipation derating
(Ta ≥ 25°C)
ΔP
C
/ °C −1.5 mA / °C
Detector
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55~125 °C
Operating temperature range T
opr
−55~100 °C
Lead soldering temperature (10s) T
sol
260 °C
Total package power dissipation P
T
200 mW
Total package power dissipation
derating (Ta ≥ 25°C)
ΔP
T
/ °C −2.0 mW / °C
Isolation voltage
(AC, 1min., R.H. ≤ 60%) (Note 1)
BV
S
3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: Pins1, 3 shorted together and pins 4, 6 shorted together.