Datasheet

ELECTRICAL CHARACTERISTICS: V
S
= ± 5V
VCA822
www.ti.com ..................................................................................................................................... SBOS343C – SEPTEMBER 2007 – REVISED DECEMBER 2008
At A
VMAX
= +10V/V, R
F
= 1k Ω , R
G
= 200 Ω , and R
L
= 100 Ω , unless otherwise noted.
VCA822
MIN/MAX OVER
TYP TEMPERATURE
0 ° C to – 40 ° C to MIN/ TEST
PARAMETER CONDITIONS +25 ° C +25 ° C
(2)
70 ° C
(3)
+85 ° C
(3)
UNITS MAX LEVEL
(1)
AC PERFORMANCE
Small-signal bandwidth (SO-14 Package) A
VMAX
= +2V/V, V
O
= 1V
PP
, V
G
= 1V 168 MHz typ C
A
VMAX
= +10V/V, V
O
= 1V
PP
, V
G
= 1V 150 MHz typ C
A
VMAX
= +100V/V, V
O
= 1V
PP
, V
G
= 1V 118 MHz typ C
Large-signal bandwidth A
VMAX
= +10V/V, V
O
= 5V
PP
, V
G
= 1V 137 MHz typ C
Gain control bandwidth V
G
= 0V
DC
+ 10mV
PP
200 170 170 165 MHz min B
Bandwidth for 0.1dB flatness A
VMAX
= +10V/V, V
O
= 1V
PP
, V
G
= 1V 28 MHz typ C
Slew rate A
VMAX
= +10V/V, V
O
= 5V Step, V
G
= 1V 1700 1500 1500 1450 V/ µ s min B
Rise-and-fall time A
VMAX
= +10V/V, V
O
= 5V Step, V
G
= 1V 2.5 3.1 3.2 3.2 ns max B
Settling time to 0.01% A
VMAX
= +10V/V, V
O
= 5V Step, V
G
= 1V 11 ns typ C
Harmonic distortion
2nd-harmonic V
O
= 2V
PP
, f = 20MHz, V
G
= 1V – 62 – 60 – 60 – 60 dBc min B
3rd-harmonic V
O
= 2V
PP
, f = 20MHz, V
G
= 1V – 68 – 66 – 66 – 66 dBc min B
Input voltage noise f > 100kHz, V
G
= 1V 8.2 nV/ √ Hz typ C
Input current noise f > 100kHz, V
G
= 1V 2.6 pA/ √ Hz typ C
GAIN CONTROL
Absolute gain error A
VMAX
= +10V/V, V
G
= 1V ± 0.1 ± 0.4 ± 0.5 ± 0.6 dB max A
Gain deviation A
VMAX
= +10V/V, 0 < V
G
< 1V ± 0.05 ± 0.3 ± 0.34 ± 0.37 dB max A
Gain deviation A
VMAX
= +10V/V, – 0.8 < V
G
< 1V ± 1.06 ± 1.9 ± 2.1 ± 2.2 dB max A
Gain at V
G
= – 0.9V Relative to maximum gain – 26 – 24 – 24 – 23 dB max A
Gain control bias current V
G
= 0V 22 30 35 37 µ A max A
Average gain control bias current drift V
G
= 0V ± 100 ± 100 nA/ ° C max B
Gain control input impedance 70 || 1 k Ω || pF typ C
DC PERFORMANCE
Input offset voltage A
VMAX
= +10V/V, V
CM
= 0V, V
G
= 0V ± 4 ± 17 ± 17.8 ± 19 mV max A
Average input offset voltage drift A
VMAX
= +10V/V, V
CM
= 0V, V
G
= 0V ± 30 ± 30 µ V/ ° C max B
Input bias current A
VMAX
= +10V/V, V
CM
= 0V, V
G
= 0V 19 25 29 31 µ A max A
Average input bias current drift A
VMAX
= +10V/V, V
CM
= 0V, V
G
= 0V ± 90 ± 90 nA/ ° C max B
Input offset current A
VMAX
= +10V/V, V
CM
= 0V, V
G
= 0V ± 0.5 ± 2.5 ± 3.2 ± 3.5 µ A max A
Average input offset current drift A
VMAX
= +10V/V, V
CM
= 0V, V
G
= 0V ± 16 ± 16 nA/ ° C max B
Maximum current through gain resistance
± 2.6 ± 2.55 ± 2.55 ± 2.5 mA max B
(I
RG MAX
)
INPUT
Most positive input voltage R
L
= 100 Ω +1.6 +1.6 +1.6 +1.6 V min A
Most negative input voltage R
L
= 100 Ω – 2.1 – 2.1 – 2.1 – 2.1 V max A
Common-mode rejection ratio V
CM
= ± 0.5V 80 65 60 60 dB min A
Input impedance
Differential 0.5 || 1 M Ω || pF typ C
Common-mode 0.5 || 2 M Ω || pF typ C
(1) Test levels: (A) 100% tested at +25 ° C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization
and simulation. (C) Typical value only for information.
(2) Junction temperature = ambient for +25 ° C tested specifications.
(3) Junction temperature = ambient at low temperature limit; junction temperature = ambient +23 ° C at high temperature limit for over
temperature specifications.
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