Datasheet
UCC27321 , UCC27322
UCC37321, UCC37322
www.ti.com
SLUS504G –SEPTEMBER 2002–REVISED MAY 2013
ELECTRICAL CHARACTERISTICS
V
DD
= 4.5 V to 15 V, T
A
= –40°C to 105°C for UCC2732x, T
A
= 0°C to 70°C for UCC3732x, T
A
= T
J
, (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input (IN)
V
IN_H
, logic 1 input threshold 2 V
V
IN_H
, logic 1 input threshold 1 V
Input current 0 V ≤ V
IN
≤ V
DD
–10 0 10 µA
Output (OUT)
Peak output current
(1)(2)
V
DD
= 14 V, 9 A
V
OH
, output high level V
OH
= V
DD
– V
OUT
, I
OUT
= –10mA 150 300 mV
V
OL
, output high level I
OUT
= 10 mA 11 25 mV
Output resistance high
(3)
I
OUT
= –10mA, V
DD
= 14 V 15 25 Ω
Output resistance low
(3)
I
OUT
= 10 mA, V V
DD
= 14 1.1 2.2 Ω
Latch--up protection
(1)
500 mA
Overall
IN = LO, EN = LO, V
DD
= 15 V 150 225
IN = HI, EN = LO, V
DD
= 15 V 440 650
UCC37321
UCC27321
IN = LO, EN = HI, V
DD
= 15 V 370 550
IN = HI, EN = HI, V
DD
= 15 V 370 550
I
DD
, static operating current µA
IN = LO, EN = LO, V
DD
= 15 V 150 225
IN = HI, EN = LO, V
DD
= 15 V 450 650
UCC37322
UCC27322
IN = LO, EN = HI, V
DD
= 15 V 75 125
IN = HI, EN = HI, V
DD
= 15 V 675 1000
Enable (ENBL)
V
IN_H
, high-level input voltage LO to HI transition 1.7 2.2 2.7 V
V
IN_L
, low-level input voltage HI to LO transition 1.1 1.6 2.0
V
Hysteresis 0.25 0.55 0.90
R
ENBL
, enable impedance V
DD
= 14 V, ENBL = GND 75 100 135 kΩ
t
D3
, propagation delay time
(4)
C
LOAD
= 10 nF 60 90
ns
t
D4
, propagation delay time
(4)
C
LOAD
= 10 nF 60 90
Switching Time
(5)
t
R
, rise time (OUT) C
LOAD
= 10 nF 20 70
t
F
, fall time (OUT) C
LOAD
= 10 nF 20 30
ns
t
D1
, propagation delay, IN rising (IN to OUT) C
LOAD
= 10 nF 25 70
t
D2
, propagation delay, IN falling (IN to OUT) C
LOAD
= 10 nF 35 70
(1) Ensured by design. Not tested in production.
(2) The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The peak output current rating is the
combined current from the bipolar and MOSFET transistors.
(3) The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The output resistance is the R
DS(ON)
of the
MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor.
(4) See Figure 2.
(5) See Figure 1 for switching waveforms.
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