Datasheet

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SLUS431A – MAY 2000 – REVISED DECEMBER 2000
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics V
DD
= 12 V, RT = 53.3 kΩ, C
VDD
= 1 µF, C
REF
= 0.1 µF, C
SS
= 0.01 µF,
R
OUT
= 4 Ω, C
OUT
= 1 nF and T
A
= T
J
(unless otherwise stated)
supply section (VDD)
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
Clamp voltage I
VDD
= 10 mA 16 17.5 19 V
Operating current No load, C
OUT
= 0 1.8 2.3 2.8 mA
Starting current VDD = 9 V 100 150 200 µA
undervoltage lockout section
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
Start threshold voltage 9.5 10 10.5 V
Hysteresis voltage 1.7 2 2.3 V
voltage reference section (REF)
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
Reference voltage 4.75 5.0 5.25 V
Load regulation voltage I
REF
= 0 mA to –2.5 mA 3 5 mV
Line regulation voltage V
DD
= 10 V to 12 V 1 5 mV
Short-circuit current 8 10 16 mA
overvoltage sense section (OVS)
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
Threshold voltage 3.68 4 4.32 V
Input bias current 0.2 µA
undervoltage sense section (UVS)
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
Threshold voltage 3.68 4 4.32 V
Input bias current 0.2 µA
soft start section (SS)
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
Discharge current SD = 4.5 V pulsed 3 5 7 µA
Charge current SD = 4.5 V pulsed –5 –7 –10 µA
Low–threshold voltage 0.9 1 1.1 V
Clamp threshold 4.5 5 5.5 V
On resistance V
DD
= 7.5 V 600 800 1000 Ω
shutdown section (SD)
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
Threshold voltage 3.68 4 4.32 V
Discharge current 0.4 0.6 0.8 µA
Charge current –4 –6 –8 µA
On resistance V
DD
= 7.5 V 2.5 3.3 5 kΩ
NOTES: 1. OUT Low, nominal of 0.7 V reflects the 3 Ω DMOS ON resistance plus 4 Ω R
SERIES
.
2. OUT High (VDD–OUT), nominal of 0.56 V reflects the 10W HVPMOS ON resistance plus 4W R
SERIES
.