Datasheet

( )
BULK max
PS
DBIAS OUT
PB PB
V
N
V V +
N N
³
( )
VDD(GM) BURST
VDD
BURST
I t
C
VDD
´
=
D
10
MOT MOT
R = t 2 10
W
æ ö
´ ´
ç ÷
è ø
s
11
MOT MOT
R = t 1 10
W
æ ö
´ ´
ç ÷
è ø
s
DRV(PK)
CL
100 kV
I =
R
P M
CL
IN
K L
R 33.2k
P
´
= W ´
UCC28610
www.ti.com SLUS888F –JANUARY 2009–REVISED SEPTEMBER 2012
Terminal Components
For reference designators refer to Figure 1.
Table 1. Terminal Components
NAME TERMINAL DESCRIPTION
CL 3
Where K
P
= 0.54W/ μH
L
M
is the minimum value of the primary inductance
P
IN
= P
OUT
/η
η = efficiency
Q
1
, power MOSFET with adequate voltage and current ratings, V
VGS
must have at least 20-V static rating.
DRV 6
D
1
, Schottky diode, rated for at least 30 V, placed between DRV and VDD
FB 1 R
FB
= 100 kΩ
GND 7 Bypass capacitor to VDD, C
BP
= 0.1-μF, ceramic
For latch-off response to overcurrent faults:
t
MOT
= user programmable maximum on-time after 250-ms delay.
where
MOT 4
• 150 kΩ ≤ R
MOT
≤ 500 kΩ
For shutdown-retry response to overcurrent faults:
• 25 kΩ ≤ R
MOT
≤ 100 kΩ and t
MOT
≤ 5 μs
where:
ΔVDD
(BURST)
is the allowed VDD ripple during burst operation
t
BURST
is the estimated burst period,
The typical C
VDD
value is approximately 47 μF
VDD 8
D
BIAS
must have a voltage rating greater than:
where:
V
DBIAS
is the reverse voltage rating of diode D
2
V
BULK(max)
is the maximum rectified voltage of C
BULK
at the highest line voltage
minimize the length of the C
VGG
connection to GND
VGG 5 C
VGG
= at least 10x C
GS
of HVMOSFET, usually
C
VGG
= 0.1 μF.
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