Datasheet

-40 -20 120
T
B
– Board Temperature – °C
0 20 40 60 80 100
P
DISS
– Power Dissipation – W
0
1.5
2.5
0.5
1.0
2.0
SOIC (D)
DIP (P)
Package
0
P
DISS
– Power Dissipation – W
10
0.0
20
60
30
50
40
q
JB
– Thermal Coefficient – °C/W
0.50 1.000.25 0.75
SOIC (D)
DIP (P)
Package
20
180
40
60
160
100
120
R
DS(on)
– On-Time Resistance – mW
-40 -25 -10 125
T
A
– Ambient Temperature – °C
5 20 35 50 65 80 95 110
80
140
2
0
4
6
12
8
10
-40 -25 -10 125
T
A
– Ambient Temperature – °C
5 20 35 50 65 80 95 110
R
DS(on)
– On-Time Resistance – W
High-Side Drive
VDD Switch
UCC28610
www.ti.com SLUS888F –JANUARY 2009–REVISED SEPTEMBER 2012
TYPICAL CHARACTERISTICS (continued)
Unless otherwise stated: VDD = 12V, VGG = 12V, ZCD = 1 V, I
FB
= 10 µA, GND = 0 V, a 0.1-μF capacitor between VDD and
GND, a 0.1-μF capacitor between VGG and GND, R
CL
= 33.2 kΩ, R
MOT
= 380 kΩ, –40°C < T
A
< +125°C, T
J
= T
A
DRIVER R
DS(on)
R
DS(on)
of HIGH SIDE DRIVE and VDD Switch
vs vs
AMBIENT TEMPERATURE TEMPERATURE
Figure 15. Figure 16.
SAFE OPERATING AREA THERMAL COEFFICIENT – θ
JB
vs vs
BOARD TEMPERATURE POWER DISSIPATION
Figure 17. Figure 18.
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