Datasheet

www.ti.com
Switching Element
2
125COND DS _ RMS DSon( C )
P I R=
125
0 35
DSon( C )
R .= W
16
2
3
OUT (max) IN _ RECTIFIED(min)
DS _ RMS
IN _ RECTIFIED(min) OUT
P V
I
V Vp
= -
350 16 120
2 3 54
120 3 390
DS _ RMS
W V
I . A
V Vp
´
= - =
´
2
3 54 0 35 4 38
COND
P . A . . W= ´ W =
4 5
r
t . ns=
780
OSS
C pF=
2
0 5
SW SW ( typ ) r OUT IN _ PEAK(max) OSS OUT
P f ( t V I . C V )= +
2
65 4 5 390 6 39 0 5 780 390 4 59
SW
P kHz( . ns V . A . pF V ) . W= ´ ´ + ´ ´ =
4 38 4 59 8 97
COND SW
P P . W . W . W+ = + =
UCC28019
SLUS755B – APRIL 2007 – REVISED DECEMBER 2007
The conduction losses of the switch are estimated using the R
DS(on)
of the FET at 125 ° C , found in the FET data
sheet, and the calculated drain to source RMS current, I
DS_RMS
:
The switching losses are estimated using the rise time of the gate, t
r
, and the output capacitance losses.
For the selected device:
Total FET losses:
Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 29
Product Folder Link(s): UCC28019