Datasheet

1
2
3
6
5
4
VDD
IN-
IN+
VREF
OUTH
OUTL
UCC27611
7
PWRPAD
Q1
UCC27611
SLUSBA5B –DECEMBER 2012 www.ti.com
Low Propagation Delays
The UCC27611 driver devices feature best-in-class input-to-output propagation delay of 13 ns (typ) at VDD = 12
V. This promises the lowest level of pulse transmission distortion available from industry standard gate driver
devices for high-frequency switching applications. As seen in Figure 7 and Figure 8, there is very little variation of
the propagation delay with temperature and supply voltage as well, offering typically less than 20-ns propagation
delays across the entire range of application conditions.
Reference Voltage (VREF)
The UCC27611 is a high-performance driver capable of fast rise and fall times at high-peak currents. Careful
PCB layout to reduce parasitic inductances is critical to achieve maximum performance. When a less-than-
optimal layout is unavoidable then the addition of a low capacitance schottky diode is recommended to prevent
the energy ringing back from the gate and charging up the decoupling capacitor on VREF (see Figure 19).
The parasitic board inductance in conjunction with the Miller capacitance of the FET can cause excessive ringing
on the gate drive waveform resulting in peaks higher that the regulated VREF drive voltage. With enough energy
present the potential exists to charge the VREF decoupling capacitor higher than the 6-V maximum allowed on a
Gallium Nitride transistor. To prevent this from happening, a low capacitance Schottky diode can be placed in the
OUTH trace as shown below.
Figure 16. Low Capacitance Schottky Diode (see Figure 20)
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