Datasheet

UCC27518
UCC27519
www.ti.com SLUSB33 –MAY 2012
ELECTRICAL CHARACTERISTICS (continued)
VDD = 12 V, T
A
= T
J
= -40°C to 140°C, 1-µF capacitor from VDD to GND. Currents are positive into, negative out of the
specified terminal.
PARAMETER TEST CONDITION MIN TYP MAX UNITS
Source/Sink Current
Source/sink peak
I
SRC/SNK
C
LOAD
= 0.22 µF, F
SW
= 1 kHz -4/+4 A
current
(1)
Outputs (OUT)
VDD = 12 V
50 90
I
OUT
= -10 mA
V
DD
-V
OH
High output voltage
VDD = 4.5 V
60 130
I
OUT
= -10 mA
mV
VDD = 12
5 11
I
OUT
= 10 mA
V
OL
Low output voltage
VDD = 4.5 V
6 12
I
OUT
= 10 mA
VDD = 12 V
5.0 7.5
I
OUT
= -10 mA
Output pull-up
R
OH
resistance
(2)
VDD = 4.5 V
5.0 11.0
I
OUT
= -10 mA
Ω
VDD = 12 V
0.5 1.0
I
OUT
= 10 mA
Output pull-down
R
OL
resistance
VDD = 4.5 V
0.6 1.2
I
OUT
= 10 mA
Switching Time
t
R
Rise time
(3)
C
LOAD
= 1.8 nF 8 12
t
F
Fall time
(3)
C
LOAD
= 1.8 nF 7 11
IN+ to output propagation VDD = 10 V
t
D1
6 17 25
delay
(3)
7-V input pulse, C
LOAD
= 1.8 nF
IN- to output propagation VDD = 10 V
ns
t
D2
6 17 24
delay
(3)
7-V input pulse, C
LOAD
= 1.8 nF
EN to output high
t
D3
C
LOAD
= 1.8 nF, 5-V enable pulse 4 12 16
propagation delay
(3)
EN to output low
t
D4
C
LOAD
= 1.8 nF, 5-V enable pulse 4 12 19
propagation delay
(3)
(1) Ensured by Design.
(2) R
OH
represents on-resistance of P-Channel MOSFET in pull-up structure of the UCC27518 and UCC27519's output stage.
(3) See timing diagrams in Figure 1, Figure 2, Figure 3 and Figure 4.
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