Datasheet

2
4
6
8
10
0 4 8 12 16 20
Supply Voltage (V)
Fall Time (ns)
G009
UCC27518
UCC27519
SLUSB33 –MAY 2012 www.ti.com
TYPICAL CHARACTERISTICS (continued)
FALL TIME
vs
SUPPLY VOLTAGE
Figure 17.
APPLICATION INFORMATION
Introduction
High-current gate driver devices are required in switching power applications for a variety of reasons. In order to
effect fast switching of power devices and reduce associated switching power losses, a powerful gate driver can
be employed between the PWM output of controllers and the gates of the power semiconductor devices. Gate
drivers also find other needs such as minimizing the effect of high-frequency switching noise by locating the high-
current driver physically close to the power switch, driving gate-drive transformers and controlling floating power-
device gates, reducing power dissipation and thermal stress in controllers by moving gate charge power losses
into itself. Finally, emerging wide band-gap power device technologies such as GaN based switches, which are
capable of supporting very high switching frequency operation, are driving very special requirements in terms of
gate drive capability. These requirements include operation at low VDD voltages (5 V or lower), low propagation
delays and availability in compact, low-inductance packages with good thermal capability. In summary gate-driver
devices are extremely important components in switching power combining benefits of high-performance, low
cost, component count and board space reduction and simplified system design.
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