Datasheet

UCC27511
UCC27512
SLUSAW9E –FEBRUARY 2012–REVISED DECEMBER 2013 www.ti.com
ELECTRICAL CHARACTERISTICS
VDD = 12 V, T
A
= T
J
= -40°C to 140°C, 1-µF capacitor from VDD to GND. Currents are positive into, negative out of the
specified terminal.
PARAMETER TEST CONDITION MIN TYP MAX UNITS
BIAS Currents
IN+ = VDD, IN- = GND 40 100 160
I
DD(off)
Startup current VDD = 3.4 V IN+ = IN- = GND or IN+ = IN- = VDD 25 75 145 µA
IN+ = GND, IN- = VDD 20 60 115
Under Voltage Lockout (UVLO)
T
A
= 25°C 3.91 4.20 4.5
V
ON
Supply start threshold
T
A
= -40°C to 140°C 3.70 4.20 4.65
V
Minimum operating
V
OFF
3.45 3.9 4.35
voltage after supply start
V
DD_H
Supply voltage hysteresis 0.2 0.3 0.5
Inputs (IN+, IN-)
Input signal high Output high for IN+ pin,
V
IN_H
2.2 2.4
threshold Output low for IN- pin
Output low for IN+ pin, V
V
IN_L
Input signal low threshold 1.0 1.2
Output high for IN- pin
V
IN_HYS
Input signal hysteresis 1.0
Source/Sink Current
Source/sink peak
I
SRC/SNK
C
LOAD
= 0.22 µF, F
SW
= 1 kHz -4/+8 A
current
(1)
Outputs (OUTH, OUTL, OUT)
VDD = 12 V
50 90
I
OUTH
= -10 mA
V
DD
-
High output voltage
V
OH
VDD = 4.5 V
60 130
I
OUTH
= -10 mA
mV
VDD = 12
5 6.5
I
OUTL
= 10 mA
V
OL
Low output voltage
VDD = 4.5 V
5.5 10
I
OUTL
= 10 mA
VDD = 12 V
5.0 7.5
I
OUTH
= -10 mA
Output pull-up
R
OH
resistance
(2)
VDD = 4.5 V
5.0 11.0
I
OUTH
= -10 mA
Ω
VDD = 12 V
0.375 0.650
I
OUTL
= 10 mA
Output pull-down
R
OL
resistance
VDD = 4.5 V
0.45 0.750
I
OUTL
= 10 mA
(1) Ensured by Design.
(2) R
OH
represents on-resistance of P-Channel MOSFET in pull-up structure of the UCC27511 and UCC27512's output stage.
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