Datasheet
UCC27423-Q1
UCC27424-Q1
UCC27425-Q1
SGLS274F –SEPTEMBER 2008–REVISED SEPTEMBER 2012
www.ti.com
ELECTRICAL CHARACTERISTICS
V
DD
= 4.5 V to 15 V, T
A
= –40°C to 125°C, T
A
= T
J
(unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input (INA, INB)
V
IH
Logic 1 input threshold 2 V
V
IL
Logic 0 input threshold 1 V
I
IN
Input current V
IN
= 0 V to V
DD
–10 0 10 μA
Output (OUTA, OUTB)
I
OUT
Output current V
DD
= 14 V
(1) (2)
4 A
V
OH
High-level output voltage V
OH
= V
DD
– V
OUT
, I
OUT
= –10 mA, V
DD
= 14 V 330 450 mV
V
OL
Low-level output voltage I
OUT
= 10 mA, V
DD
= 14 V 22 40 mV
T
A
= 25°C, I
OUT
= –10 mA, V
DD
= 14 V
(3)
25 30 35
R
OH
Output resistance high Ω
T
A
= full range, I
OUT
= –10 mA, V
DD
= 14 V
(3)
18 45
T
A
= 25°C, I
OUT
= 10 mA, V
DD
= 14 V
(3)
1.9 2.2 2.5
R
OL
Output resistance low Ω
T
A
= full range, I
OUT
= 10 mA, V
DD
= 14 V
(3)
1.2 4
Latch-up protection
(1)
500 mA
Switching Time
t
r
Rise time (OUTA, OUTB) C
LOAD
= 1.8 nF
(1)
20 40 ns
t
f
Fall time (OUTA, OUTB) C
LOAD
= 1.8 nF
(1)
15 40 ns
t
D1
Delay time, IN rising (IN to OUT) C
LOAD
= 1.8 nF
(1)
25 50 ns
UCC27423-Q1,
35 60
UCC27424-Q1
t
D2
Delay time, IN falling (IN to OUT) C
LOAD
= 1.8 nF
(1)
ns
UCC27425-Q1 35 70
Enable (ENBA, ENBB)
V
IN_H
High-level input voltage Low to high transition 1.7 2.4 2.9 V
V
IN_L
Low-level input voltage High to low transition 1.1 1.8 2.2 V
Hysteresis 0.15 0.55 0.90 V
R
ENBL
Enable impedance V
DD
= 14 V, ENBL = GND 75 100 145 kΩ
t
D3
Propagation delay time (see Figure 3) C
LOAD
= 1.8 nF
(1)(4)
30 60 ns
t
D4
Propagation delay time (see Figure 3) C
LOAD
= 1.8 nF
(1)(4)
100 150 ns
(1) Specified by design
(2) The pullup/pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The pulsed output current rating is the
combined current from the bipolar and MOSFET transistors.
(3) The pullup/pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The output resistance is the Rds(on) of the
MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor.
(4) Not production tested
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