Datasheet
UCC27423-Q1
UCC27424-Q1
UCC27425-Q1
www.ti.com
SGLS274F –SEPTEMBER 2008–REVISED SEPTEMBER 2012
INPUT/OUTPUT TABLE
INPUTS (V
IN_L
, V
IN_H
) UCC27423-Q1 UCC27424-Q1 UCC27425-Q1
ENBA ENBB
INA INB OUTA OUTB OUTA OUTB OUTA OUTB
H H L L H H L L H L
H H L H H L L H H H
H H H L L H H L L L
H H H H L L H H L H
L L X X L L L L L L
ABSOLUTE MAXIMUM RATINGS
(1) (2)
over operating free-air temperature range (unless otherwise noted)
PARAMETER VALUE
V
DD
Supply voltage –0.3 V to 16 V
DC 0.3 A
I
OUT
Output current
Pulsed, 0.5 μs 4.5 A
–5 V to 6 V or (V
DD
+ 0.3)
V
IN
Input voltage INA, INB
(whichever is larger)
–0.3 V to 6 V or (V
DD
+ 0.3)
V
EN
Enable voltage ENBA, ENBB
(whichever is larger)
T
A
= 25°C (D package) 650 mW
P
D
Power dissipation
T
A
= 25°C (DGN package) 3 W
T
J
Junction operating temperature range –55°C to 150°C
T
stg
Storage temperature range –65°C to 150°C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to GND. Currents are positive into, negative out of, the specified terminal.
DISSIPATION RATINGS
POWER RATING T
A
= 70°C
PACKAGE θ
JC
(°C/W) θ
JA
(°C/W)
(mW)
(1)
D (SOIC-8) 42 84 to 160
(2)
344 to 655
(2)
DGN (MSOP PowerPAD)
(3)
11.9 63 873
(1) 125°C operating junction temperature is used for power rating calculations.
(2) The range of values indicates the effect of the PCB. These values are intended to give the system designer an indication of the best-
and worst-case conditions. In general, the system designer should attempt to use larger traces on the PCB, where possible, to spread
the heat away form the device more effectively.
(3) The PowerPAD™ is not directly connected to any leads of the package. However, it is electronically and thermally connected to the
substrate which is the ground of the device.
Copyright © 2008–2012, Texas Instruments Incorporated 3