Datasheet
UCC27423, UCC27424, UCC27425
www.ti.com
SLUS545D –NOVEMBER 2002–REVISED MAY 2013
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
(1)
VALUE UNIT
V
DD
Supply voltage -0.3 to 16 V
I
OUT_DC
Output current (OUTA, OUTB) DC 0.2 A
I
OUT_PULSED
Pulsed, (0.5μs) 4.5 A
V
IN
Input voltage (INA, INB) -5 to 6 or V
DD
+0.3 (whichever is larger) V
Enable voltage (ENBA, ENBB) –0.3 V to 6 V or V
DD
+0.3 (whichever is larger)
DGN package 3 W
Power dissipation at T
A
= 25°C D package 650
mW
P package 350
T
J
Junction operating temperature –55 to 150
T
stg
Storage temperature –65 to 150 °C
Lead temperature (soldering, 10 sec) 300
(1) When VDD ≤ 6 V, EN rating max value is 6 V; when VDD > 6 V, EN rating max value is VDD + 0.3 V.
ELECTRICAL CHARACTERISTICS
V
DD
= 4.5V to 15V, T
A
= –40°C to 125°C ,T
A
= T
J
, (unless otherwise noted)
PARAMETER TEST CONDITION MIN TYP MAX UNIT
INPUT (INA, INB)
V
IN_H
Logic 1 input threshold 2
V
V
IN_L
Logic 0 input threshold 1
Input current 0 V ≤ V
IN
≤ V
DD
–10 0 10 μA
OUTPUT (OUTA, OUTB)
Output current V
DD
= 14 V
(1)
4 A
V
OH
High-level output voltage V
OH
= V
DD
– V
OUT
, I
OUT
= –10 mA 330 450
mV
V
OL
Low-level output level I
OUT
= 10 mA 22 45
T
A
= 25°C, I
OUT
= –10 mA, V
DD
= 14 V
(2)
25 30 35
Output resistance high
T
A
= full range, I
OUT
= –10 mA, V
DD
= 14 V
(2)
18 45
Ω
T
A
= 25°C, I
OUT
= 10 mA, V
DD
= 14 V
(2)
1.9 2.2 2.5
Output resistance low
T
A
= full range I
OUT
= 10 mA, V
DD
= 14 V
(2)
1.2 4.0
Latch-up protection 500 mA
SWITCHING TIME
t
r
Rise time (OUTA, OUTB) C
LOAD
= 1.8 nF 20 40
t
f
Fall time (OUTA, OUTB) C
LOAD
= 1.8 nF 15 40
ns
t
d1
Delay, IN rising (IN to OUT) C
LOAD
= 1.8 nF 25 40
t
d2
Delay, IN falling (IN to OUT) C
LOAD
= 1.8 nF 35 50
(1) The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The pulsed output current rating is the
combined current from the bipolar and MOSFET transistors.
(2) The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The output resistance is the Rds(on) of the
MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor.
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