Datasheet
UCC27323, UCC27324, UCC27325
UCC37323, UCC37324, UCC37325
www.ti.com
SLUS492H –JUNE 2001–REVISED MAY 2013
ABSOLUTE MAXIMUM RATINGS
(1)(2)
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Analog input voltage (INA, INB) –0.3 to V
DD
+ 0.3 V not to exceed 16 V
Output body diode DC current (OUTA, OUTB) 0.2
I
OUT_DC
Output current (OUTA, OUTB) DC 0.2
A
I
OUT_PULSE
Pulsed (0.5 µs) 4.5
D
Power dissipation at T
A
= 25°C D package 1.14
W
DGN package 2.12
P package 780 mW
Output voltage (OUTA, OUTB) 16 V
V
DD
Supply voltage –0.3 16 V
T
J
Junction operating temperature –55 150
T
stg
Storage temperature –65 150 °C
Lead temperature (soldering, 10 sec.) 300
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to GND. Currents are positive into, negative out of the specified terminal.
ELECTRICAL CHARACTERISTICS
V
DD
= 4.5 to 15 V, T
A
= T
J
(unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT (INA, INB)
V
IN_H
Logic 1 input threshold 2
V
V
IN_L
Logic 0 input threshold 1
Input current 0 V ← V
IN
← V
DD
–10 10 µA
OUTPUT (OUTA, OUTB)
Output current V
DD
= 14 V
(1)
4 V
V
OH
High-level output voltage V
OH
= V
DD
– V
OUT
, I
OUT
= –10 mA 300 450
mV
V
OL
Low-level output level I
OUT
= 10 mA 22 45
Output resistance high T
A
= 25°C, I
OUT
= –10 mA, V
DD
= 14 V
(2)
25 30 35
T
A
= full range, I
OUT
= –10 mA, V
DD
= 14 V
(2)
18 42
Ω
Output resistance low T
A
= 25°C, I
OUT
= 10 mA, V
DD
= 14 V
(2)
1.9 2.2 2.5
T
A
= full range, I
OUT
= 10 mA, V
DD
= 14 V
(2)
1.2 4
Latch-up protection 500 mA
(1) The pullup and pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The pulsed output current rating is the
combined current from the bipolar and MOSFET transistors.
(2) The pullup and pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The output resistance is the R
DS(ON)
of the
MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor.
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