Datasheet
DESCRIPTION (CONT.)
DEVICE RATINGS
ABSOLUTE MAXIMUM RATINGS
UCC27200 , UCC27201
SLUS746B – DECEMBER 2006 – REVISED NOVEMBER 2008 .......................................................................................................................................
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An on-chip bootstrap diode eliminates the external discrete diodes. Under-voltage lockout is provided for both the
high-side and the low-side drivers forcing the outputs low if the drive voltage is below the specified threshold.
Two versions of the UCC27200 are offered. The UCC27200 has high noise immune CMOS input thresholds
while the UCC27201 has TTL compatible thresholds.
Both devices are offered in 8-pin SOIC (D), PowerPad™ SOIC-8 (DDA) and SON-8 (DRM) packages.
ORDERING INFORMATION
PACKAGED DEVICES
(1)
TEMPERATURE RANGE PowerPad™ SOIC-8 SON-8 (DRM)
(3)
INPUT COMPATIBILITY SOIC-8 (D)
(2)
T
A
= T
J
(DDA)
(2)
CMOS UCC27200D UCC27200DDA UCC27200DRMT
-40 ° C to +140 ° C
TTL UCC27201D UCC27201DDA UCC27201DRMT
(1) These products are packaged in Lead (Pb)-Free and green lead finish of PdNiAu which is compatible with MSL level 1 at 255-260 ° C
peak reflow temperature to be compatible with either lead free or Sn/Pb soldering operations.
(2) D (SOIC-8) and DDA (Power Pad™ SOIC-8) packages are available taped and reeled. Add R suffix to device type (e.g. UCC27200DR)
to order quantities of 2,500 devices per reel.
(3) DRM (SON-8) package comes either in a small reel of 250 pieces as part number UCC27200DRMT, or larger reels of 3000 pieces as
part number UCC27200 DRMR.
Over operating free-air temperature, unless noted, all voltages are with respect to V
SS
(1)
PARAMETER VALUE UNIT
Supply voltage range,
(2)
V
DD
-0.3 to 20
Input voltages on LI and HI, V
LI
, V
HI
-0.3 to 20
DC -0.3 to V
DD
+ 0.3,
Output voltage on LO, V
LO
Repetitive pulse < 100 ns -2 to V
DD
+ 0.3
DC V
HS
– 0.3 to V
HB
+ 0.3
Output voltage on HO, V
HO
V
Repetitive pulse < 100 ns V
HS
- 2 to V
HB
+ 0.3, (V
HB
- V
HS
< 20)
DC -1 to 120
Voltage on HS, V
HS
Repetitive pulse < 100 ns -5 to 120
Voltage on HB, V
HB
-0.3 to 120
Voltage On HB-HS -0.3 to 20
Operating virtual junction temperature range, T
J
-40 to +150
Storage temperature, T
STG
-65 to +150 ° C
Lead temperature (soldering, 10 sec.) +300
Power dissipation at T
A
= 25 ° C (D package)
(3)
1.3
Power dissipation at T
A
= 25 ° C (DDA package)
(3)
2.7 W
Power dissipation at T
A
= 25 ° C (DRM package)
(3)
3.3
(1) Stresses beyond those listed under “ absolute maximum ratings ” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under “ recommended operating
conditions ” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to Vss. Currents are positive into, negative out of the specified terminal.
(3) This data was taken using the JEDEC proposed high-K test PCB. See THERMAL CHARACTERISTICS section for details.
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Product Folder Link(s): UCC27200 UCC27201