Datasheet
UCC24610
SLUSA87B –AUGUST 2010–REVISED SEPTEMBER 2010
www.ti.com
ELECTRICAL CHARACTERISTICS
At VCC = 5 V
DC
, C
GATE
= 0 pF, R
TON
= 200 kΩ, R
EN/TOFF
= 100 kΩ, −40°C < T
J
= T
A
< 125°C, all voltages are with respect to
GND, and currents are positive into and negative out of the specified terminal, unless otherwise noted. Typical values are at
T
J
= 25°C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
Bias Supply
VCC current,
ICC
START
VCC = 4.05 V - 70 100
undervoltage
mA
ICC
STBY
VCC current, disabled VCC = 5.5 V, R
EN/TOFF
= 0 Ω - 130 200
ICC
ON
VCC current, enabled VCC = 5.5 V, R
EN/TOFF
= 100 kΩ 1.40 2.15 2.80 mA
EN/TOFF turn-on
VEN
ON
EN/TOFF driven, ICC > 1 mA 1.31 1.40 1.49
threshold, rising
V
EN/TOFF turn-off
VEN
OFF
EN/TOFF driven, ICC < 200 µA 0.74 0.80 0.86
threshold, falling
EN/TOFF input
I
EN-START
EN/TOFF = 1.3 V, rising from zero -21.5 -20.0 -18.5
current, disabled
mA
EN/TOFF input
I
EN-ON
EN/TOFF = 2 V -10.7 -10.0 -9.3
current, enabled
Under-Voltage Lockout (UVLO)
VCC
ON
VCC turn-on threshold Turn-on detected by V
EN
> 1.0 V 4.15 4.40 4.65
VCC
OFF
VCC turn-off threshold Turn-off detected by V
EN
< 0.5 V 3.96 4.20 4.44 V
VCC
HYST
UVLO hysteresis VCC
HYST
= VCC
ON
- VCC
OFF
0.15 0.20 0.25
MOSFET Voltage Sensing
GATE re-arming
V
THARM
VD to GND, rising 1.3 1.5 1.7 V
threshold
GATE turn-on
V
THON
(VD – VS) falling, VS = 0 V -220 -150 -80
threshold
mV
GATE turn-off
V
THOFF
(VD – VS) rising, VS = 0 V -8 -5 -2
threshold
GATE turn-on
t
DON
From V
THON
to GATE > 1 V - 44 70
propagation delay
ns
GATE turn-off
t
DOFF
From V
THOFF
to GATE < 4 V - 16 35
propagation delay
VD input bias current,
I
DH
VD = 50 V, VS = 0 V - 0.05 2.00
high
VD input bias current, mA
I
DL
VD = -0.15 V, VS = 0 V -250 -150 -50
low
I
S
VS input bias current VD = 0 V, VS = 0 V -250 -150 -50
Minimum On-Time Setting
Minimum on-time, low
T
ONLR
R
TON
= 16.5 kΩ 0.17 0.25 0.33
resistance
ms
Minimum on-time,
T
ONHR
R
TON
= 200 kΩ 2.2 3.0 3.8
high resistance
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