Datasheet

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SLUS338A – JUNE 1993 – REVISED MAY 2001
2
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J OR N PACKAGE
(TOP VIEW)
DW PACKAGE
(TOP VIEW)
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
†
Peak inverse voltage (per diode) 50 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Diode-to-diode voltage 80 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak forward current
UC1611 1 A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UC3611 3 A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power dissipation at T
A
= 70°C 1 W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature (soldering, 10 seconds) 300°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
‡
Please consult packaging section of data book for thermal limitations and considerations of package.
electrical characteristics, all specifications apply to each individual diode, T
J
= 25°C, T
A
= T
J
,
(except as noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
For ard oltage drop
I
F
= 100 mA 0.3 0.4 0.7 V
Forward voltage drop
I
F
= 1 A 0.9 1.2 V
Leakage current
V
R
= 40 V 0.01 0.1 mA
Leakage current
V
R
= 40 V, T
J
= 100°C 0.1 1.0 mA
Reverse recovery 0.5 A forward to 0.5 A reverse 20 ns
Forward recovery 1 A forward to 1.1 V recovery 40 ns
Junction capacitance V
R
= 5V 100 pF
NOTE: At forward currents of greater than 1.0 A, a parasitic current of approximately 10 mA may be collected by adjacent diodes.